Article: Optical properties of light-hole excitons in GaN epilayers
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- Publisher Website: 10.1063/1.3520218
- Scopus: eid_2-s2.0-78751519466
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| Title | Optical properties of light-hole excitons in GaN epilayers | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Zhang, F1 Xu, SJ1 Ning, JQ1 Zheng, CC1 Zhao, DG2 Yang, H3 Che, CM1 | ||||||
| Keywords | Free excitons Gan epilayers Light hole exciton Luminescence lifetime Off-resonance | ||||||
| Issue Date | 2010 | ||||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||
| Citation | Journal Of Applied Physics, 2010, v. 108 n. 11 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3520218 | ||||||
| Abstract | Optical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FX A) have strong response, FX B band can be well resolved in the near-resonance PL spectra. The variable-temperature near-resonance PL spectra show that the linewidth of FX B broadens faster than the FX A with increasing temperature. Moreover, the luminescence lifetime of FX B is found to be shorter than that of FX A. © 2010 American Institute of Physics. | ||||||
| ISSN | 0021-8979 2011 Impact Factor: 2.168 2011 SCImago Journal Rankings: 0.139 | ||||||
| DOI | http://dx.doi.org/10.1063/1.3520218 | ||||||
| ISI Accession Number ID | WOS:000285474100158
Funding Information: The work described in this paper was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (Grant No. 61028012), and partially by a grant from the University Grants Committee of the Hong Kong Special Administrative Region, China (Project No. AoE/P-03/08). | ||||||
| References | References in Scopus | ||||||
| Grants | Institute of Molecular Functional Materials |
| dc.contributor.author | Zhang, F | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Xu, SJ | ||||||
| dc.contributor.author | Ning, JQ | ||||||
| dc.contributor.author | Zheng, CC | ||||||
| dc.contributor.author | Zhao, DG | ||||||
| dc.contributor.author | Yang, H | ||||||
| dc.contributor.author | Che, CM | ||||||
| dc.date.accessioned | 2011-11-29T06:25:13Z | ||||||
| dc.date.available | 2011-11-29T06:25:13Z | ||||||
| dc.date.issued | 2010 | ||||||
| dc.description.abstract | Optical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FX A) have strong response, FX B band can be well resolved in the near-resonance PL spectra. The variable-temperature near-resonance PL spectra show that the linewidth of FX B broadens faster than the FX A with increasing temperature. Moreover, the luminescence lifetime of FX B is found to be shorter than that of FX A. © 2010 American Institute of Physics. | ||||||
| dc.description.grant | Institute of Molecular Functional Materials | ||||||
| dc.description.grantcode | 101180 | ||||||
| dc.description.nature | published_or_final_version | ||||||
| dc.identifier.citation | Journal Of Applied Physics, 2010, v. 108 n. 11 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3520218 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3520218 | ||||||
| dc.identifier.hkuros | 183887 | ||||||
| dc.identifier.isi | WOS:000285474100158
Funding Information: The work described in this paper was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (Grant No. 61028012), and partially by a grant from the University Grants Committee of the Hong Kong Special Administrative Region, China (Project No. AoE/P-03/08). | ||||||
| dc.identifier.issn | 0021-8979 2011 Impact Factor: 2.168 2011 SCImago Journal Rankings: 0.139 | ||||||
| dc.identifier.issue | 11 | ||||||
| dc.identifier.openurl | | ||||||
| dc.identifier.scopus | eid_2-s2.0-78751519466 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/143461 | ||||||
| dc.identifier.volume | 108 | ||||||
| dc.language | eng | ||||||
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | Journal of Applied Physics | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.rights | Journal of Applied Physics. Copyright © American Institute of Physics. | ||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||
| dc.rights | Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2010, v. 108 n. 11, article no. 116103) and may be found at (http://jap.aip.org/resource/1/japiau/v108/i11/p116103_s1). | ||||||
| dc.subject | Free excitons | ||||||
| dc.subject | Gan epilayers | ||||||
| dc.subject | Light hole exciton | ||||||
| dc.subject | Luminescence lifetime | ||||||
| dc.subject | Off-resonance | ||||||
| dc.title | Optical properties of light-hole excitons in GaN epilayers | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Institute of Semiconductors Chinese Academy of Sciences
- Chinese Academy of Sciences