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Article: Optical properties of light-hole excitons in GaN epilayers

TitleOptical properties of light-hole excitons in GaN epilayers
Authors
KeywordsFree excitons
Gan epilayers
Light hole exciton
Luminescence lifetime
Off-resonance
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2010, v. 108 n. 11 How to Cite?
AbstractOptical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FX A) have strong response, FX B band can be well resolved in the near-resonance PL spectra. The variable-temperature near-resonance PL spectra show that the linewidth of FX B broadens faster than the FX A with increasing temperature. Moreover, the luminescence lifetime of FX B is found to be shorter than that of FX A. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143461
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
NSFC61028012
University Grants Committee of the Hong Kong Special Administrative Region, ChinaAoE/P-03/08
Funding Information:

The work described in this paper was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (Grant No. 61028012), and partially by a grant from the University Grants Committee of the Hong Kong Special Administrative Region, China (Project No. AoE/P-03/08).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorZhang, Fen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorNing, JQen_HK
dc.contributor.authorZheng, CCen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2011-11-29T06:25:13Z-
dc.date.available2011-11-29T06:25:13Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Applied Physics, 2010, v. 108 n. 11en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143461-
dc.description.abstractOptical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FX A) have strong response, FX B band can be well resolved in the near-resonance PL spectra. The variable-temperature near-resonance PL spectra show that the linewidth of FX B broadens faster than the FX A with increasing temperature. Moreover, the luminescence lifetime of FX B is found to be shorter than that of FX A. © 2010 American Institute of Physics.en_HK
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2010, v. 108 n. 11, article no. 116103) and may be found at (http://jap.aip.org/resource/1/japiau/v108/i11/p116103_s1).-
dc.subjectFree excitons-
dc.subjectGan epilayers-
dc.subjectLight hole exciton-
dc.subjectLuminescence lifetime-
dc.subjectOff-resonance-
dc.titleOptical properties of light-hole excitons in GaN epilayersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=108&issue=11, article no. 116103&spage=&epage=&date=2010&atitle=Optical+properties+of+light-hole+excitons+in+GaN+epilayers-
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3520218en_HK
dc.identifier.scopuseid_2-s2.0-78751519466en_HK
dc.identifier.hkuros183887-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78751519466&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume108en_HK
dc.identifier.issue11en_HK
dc.identifier.isiWOS:000285474100158-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectInstitute of Molecular Functional Materials-
dc.identifier.scopusauthoridZhang, F=36182069500en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridZheng, CC=36926810900en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridYang, H=24336676500en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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