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  Patent History
  • Application
    US /690188 2007-03-23
  • Publication
    US 20080105955 2008-05-08
  • Granted
    US 7718516 2010-05-18
Supplementary

granted patent: Method For Epitaxial Growth Of (110)-Oriented Srtio3 Thin Films On Silicon Without Template

TitleMethod For Epitaxial Growth Of (110)-Oriented Srtio3 Thin Films On Silicon Without Template
Granted PatentUS 7718516
Granted Date2010-05-18
Priority Date2007-03-23 US /690188
2006-03-23 US 11/785668P
Inventors
Issue Date2010
Citation
US Patent 7718516. Washington, DC: US Patent and Trademark Office (USPTO), 2010 How to Cite?
AbstractA Process And Structure Utilizes Pulsed Laser Deposition Technique To Grow Srtio3 (Sto) Films With Single (110) Out-Of-Plane Orientation Upon A Surface Of All (100), (110) And (111)-Oriented Silicon (Si) Substrates. No Designed Buffer Layer Is Needed Beneath The Sto Thin Films. The In-Plane Alignments For The Epitaxial Sto Films Grown Directly On Si (100) Are As Sto [001]//Si [001] And Sto [1 10]/Si [010]. The Srtio3/Si Interface Is Epitaxially Crystallized Without Any Amorphous Oxide Layer. The Formation Of A Coincident Site Lattice At The Interface Between Si And A Sr-Silicate And/Or Sto Helps To Stabilize Sto In The Epitaxial Orientation. The Invention Can Be Applied To Epitaxial Template And Barrier For The Integration Of Many Other Functional Oxide Materials On Silicon.; In Particular, The (110)-Oriented Sto Structure Is Useful For Practical Applications Such As The Preparation Of Ferroelectric-Insulator-Semiconductor Devices As Well As Providing A Broad Solution To The Generic Problem Of Polarity Discontinuities At Perovskite Heterointerfaces.
Persistent Identifierhttp://hdl.handle.net/10722/142191
References

 

DC FieldValueLanguage
dc.date.accessioned2011-10-19T06:34:35Z-
dc.date.available2011-10-19T06:34:35Z-
dc.date.issued2010-
dc.identifier.citationUS Patent 7718516. Washington, DC: US Patent and Trademark Office (USPTO), 2010en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142191-
dc.description.abstractA Process And Structure Utilizes Pulsed Laser Deposition Technique To Grow Srtio3 (Sto) Films With Single (110) Out-Of-Plane Orientation Upon A Surface Of All (100), (110) And (111)-Oriented Silicon (Si) Substrates. No Designed Buffer Layer Is Needed Beneath The Sto Thin Films. The In-Plane Alignments For The Epitaxial Sto Films Grown Directly On Si (100) Are As Sto [001]//Si [001] And Sto [1 10]/Si [010]. The Srtio3/Si Interface Is Epitaxially Crystallized Without Any Amorphous Oxide Layer. The Formation Of A Coincident Site Lattice At The Interface Between Si And A Sr-Silicate And/Or Sto Helps To Stabilize Sto In The Epitaxial Orientation. The Invention Can Be Applied To Epitaxial Template And Barrier For The Integration Of Many Other Functional Oxide Materials On Silicon.; In Particular, The (110)-Oriented Sto Structure Is Useful For Practical Applications Such As The Preparation Of Ferroelectric-Insulator-Semiconductor Devices As Well As Providing A Broad Solution To The Generic Problem Of Polarity Discontinuities At Perovskite Heterointerfaces.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documents-
dc.titleMethod For Epitaxial Growth Of (110)-Oriented Srtio3 Thin Films On Silicon Without Templateen_HK
dc.typePatenten_US
dc.identifier.emailGao, Ju:jugao@hku.hken_US
dc.identifier.authorityGao, Ju=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros182024-
dc.contributor.inventorHao, Jen_US
dc.contributor.inventorGao, Jen_US
patents.identifier.applicationUS /690188en_HK
patents.identifier.grantedUS 7718516en_HK
patents.description.assigneeUniv Hong Kong [Cn]en_HK
patents.description.countryUnited States of Americaen_HK
patents.date.publication2008-05-08en_HK
patents.date.granted2010-05-18en_HK
dc.relation.referencesUS 5225031 (A) 1993-07-06en_HK
dc.relation.referencesUS 5270298 (A) 1993-12-14en_HK
dc.relation.referencesUS 5830270 (A) 1998-11-03en_HK
dc.relation.referencesUS 2003062553 (A1) 2003-04-03en_HK
dc.relation.referencesUS 6642539 (B2) 2003-11-04en_HK
patents.identifier.hkutechidPhy-2006-00210-1en_US
patents.date.application2007-03-23en_HK
patents.date.priority2007-03-23 US /690188en_HK
patents.date.priority2006-03-23 US 11/785668Pen_HK
patents.description.ccUSen_HK
patents.identifier.publicationUS 20080105955en_HK
patents.relation.familyUS 2008105955 (A1) 2008-05-08en_HK
patents.relation.familyUS 7718516 (B2) 2010-05-18en_HK
patents.description.kindB2en_HK
patents.typePatent_granteden_HK

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