| | Title | Author(s) | Year | View Count |
| 1 |  | Monte carlo simulation of positron induced secondary electrons in thin carbon foils | Cai, LH; Yang, B; Ling, CC; Beling, CD; Fung, S | 2011 | 98 |
| 2 | | Positron annihilation study of defects in electron-irradiated single crystal zinc oxide | To, CK; Yang, B; Beling, CD; Fung, S; Ling, CC; Gong, M | 2011 | 219 |
| 3 | | Temperature dependence of resistive switching in aluminum/anodized aluminum film structure | Zhu, W; Chen, TP; Yang, M; Liu, Y; Fung, S | 2011 | 723 |
| 4 | | Charge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devices | Yang, M; Chen, TP; Wong, JI; Liu, Y; Tseng, AA; Fung, S | 2010 | 187 |
| 5 |  | Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing | Cen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S | 2009 | 519 |
| 6 | | Temperature dependence study of positronium formation in high density polyethylene by positron annihilation lifetime spectroscopy | Nahid, F; Beling, CD; Fung, S | 2007 | 114 |
| 7 | | Silicon and carbon vacancies in silicon carbide studied by coincidence Doppler broadening spectroscopy | Zhang, JD; Cheng, CC; Ling, CC; Beling, CD; Fung, S | 2007 | 142 |
| 8 | | Positron annihilation spectroscopic study of hydrothermal grown n-type zinc oxide single crystal | Hui, CW; Zhang, ZD; Zhou, TJ; Ling, CC; Beling, CD; Fung, S; Brauer, G; Anwand, W; Skorupa, W | 2007 | 347 |
| 9 | | Doppler broadening of annihilation radiation spectroscopy study using Richardson-Lucy, Maximum Entropy and Huber methods | Yu, DP; Zhang, JD; Cheng, V; Beling, CD; Fung, S | 2007 | 126 |
| 10 |  | Positron annihilation study of hydrothermal grown n-type zinc oxide | Hui, CW; Zhang, J; Zhou, T; Ling, FCC; Beling, CD; Fung, SHY; Brauer, G; Anwand, W; Skorupa, W | 2006 | 166 |
| 11 | | Deep level transient spectroscopic study of electron irradiated p-type 6H-SiC | Zhong, ZQ; Gong, M; Chen, X; Ling, FCC; Fung, SHY; Beling, CD | 2006 | 245 |
| 12 | | A real-time S-parameter imaging system | Naik, PS; Cheung, CK; Beling, CD; Fung, S | 2005 | 199 |
| 13 | | Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation | Ling, CC; Chen, XD; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W; Gong, M | 2005 | 630 |
| 14 | | The effect of thermal annealing on the properties of indium tin oxide thin films | Wang, RX; Beling, CD; Fung, S; Djurišić, AB; Kwong, C; Li, S | 2005 | 466 |
| 15 | | Raman scattering and X-ray diffraction study of neutron irradiated GaN epilayers | Wang, RX; Xu, SJ; Li, S; Fung, S; Beling, CD; Wang, K; Wei, ZF; Zhou, TJ; Zhang, JD; Gong, M; Pang, GKH | 2005 | 560 |
| 16 | | 4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions | Chen, X; Huang, Y; Ling, FCC; Fung, SHY; Beling, CD | 2005 | 250 |
| 17 | | Deep level defects in 6H silicon carbide induced by particles irradiations | Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM | 2005 | 195 |
| 18 | | Photoluminescence of electron/neutron-irradiated n-type 6H-SiC | Zhong, ZQ; Wu, DX; Gong, M; Wang, O; Xu, SJ; Chen, X; Ling, FCC; Fung, SHY; Beling, CD | 2005 | 202 |
| 19 | | Spatial distribution of carrier concentration in un-doped GaN film grown on sapphire (Abstract) | Huang, Y; Chen, XD; Beling, CD; Fung, SHY; Ling, FCC | 2004 | 298 |
| 20 | | Design and implementation of a real-time positron imager | Naik, PS; Beling, CD; Fung, S | 2004 | 838 |
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