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TypeTitleAuthor(s)YearViews
Optimization of Tree-like Core Overlay in Hybrid-structured Application-layer MulticastWeng, J; Zou, X; Wang, M201226
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridationsJi, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X2010111
 
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectricZou, X; Xu, JP; Lai, PT; Li, Y; Ji, F; Deng, LF2010126
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thicknessXu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL200989
 
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatmentXu, JP; Zou, X; Li, CX; Lai, PT; Chan, CL200987
 
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectricLi, CX; Zou, X; Lai, PT; Xu, JP; Chan, CL200868
 
A New Interleaver Design for Iteratively Decoded Bit-Interleaved Coded ModulationZou, X; Wang, M; Feng, G2008126
 
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectricZou, X; Xu, JP; Lai, PT; Li, CX200853
 
Effects of Post deposited Annealing on Ge MOS Capacitors with Sub-nm EOT HfTiO Gate DielectricZou, X; Xu, J; Lai, PT; Li, C200886
 
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatmentLi, CX; Zou, X; Xu, JP; Lai, PT2008177
 
Gate-leakage model of Ge MOS capacitor with high-k gate dielectricZou, X; Xu, JP; Lai, PT; Li, CX; Zhang, XF2007106
 
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETsZhang, XF; Xu, JP; Lai, PT; Zou, X; Li, CX200798
 
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vaporZou, X; Xu, JP; Li, CX; Lai, PT2007295
 
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectricLi, CX; Lai, PT; Xu, JP; Zou, X200787
 
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambientsLai, PT; Xu, JP; Li, CX; Zou, X; Chen, WB200772
 
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layerZou, X; Xu, JP; Li, CX; Lai, PT; Chen, WB200783
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate DielectricZou, X; Xu, JP; Lai, PT; Li, C; Zhang, XF200696
 
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate DielectricZou, X; Li, C; Xu, JP; Lai, PT; Chen, WB2006121
 
Threshold voltage model of SiGe channel pMOSFET without Si cap layerZou, X; Li, CX; Xu, JP; Lai, PT; Chen, WB200678
 
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambientLai, PT; Li, CX; Xu, JP; Zou, X; Chan, CL2006655
 
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