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TypeTitleAuthor(s)YearViews
Optimization of Tree-like Core Overlay in Hybrid-structured Application-layer Multicast
Journal:
KSII Transactions on Internet and Information Systems
Publisher:
Korea Society of Internet Information (KSII). The Journal's web site is located at http://www.itiis.org/
Weng, J; Zou, X; Wang, M201267
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X2010155
 
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Zou, X; Xu, JP; Lai, PT; Li, Y; Ji, F; Deng, LF2010182
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Xu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL2009111
 
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, JP; Zou, X; Li, CX; Lai, PT; Chan, CL2009110
 
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Li, CX; Zou, X; Lai, PT; Xu, JP; Chan, CL200890
 
A New Interleaver Design for Iteratively Decoded Bit-Interleaved Coded Modulation
Journal:
International Journal of Soft Computing
Publisher:
MedwellJournals
Zou, X; Wang, M; Feng, G2008147
 
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceedings/Conference:
3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS
Zou, X; Xu, JP; Lai, PT; Li, CX200869
 
Effects of Post deposited Annealing on Ge MOS Capacitors with Sub-nm EOT HfTiO Gate Dielectric
Proceedings/Conference:
The 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS)
Zou, X; Xu, J; Lai, PT; Li, C2008100
 
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment
Proceedings/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Li, CX; Zou, X; Xu, JP; Lai, PT2008202
 
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceedings/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, X; Xu, JP; Lai, PT; Li, CX; Zhang, XF2007126
 
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceedings/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zhang, XF; Xu, JP; Lai, PT; Zou, X; Li, CX2007114
 
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Zou, X; Xu, JP; Li, CX; Lai, PT2007339
 
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceedings/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Li, CX; Lai, PT; Xu, JP; Zou, X2007114
 
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceedings/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Lai, PT; Xu, JP; Li, CX; Zou, X; Chen, WB200795
 
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Zou, X; Xu, JP; Li, CX; Lai, PT; Chen, WB2007117
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceedings/Conference:
Proceedings of 8th ICSICT
Zou, X; Xu, JP; Lai, PT; Li, C; Zhang, XF2006109
 
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Proceedings/Conference:
Proceedings of RIUPEEEC
Zou, X; Li, C; Xu, JP; Lai, PT; Chen, WB2006136
 
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X; Li, CX; Xu, JP; Lai, PT; Chen, WB200699
 
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher:
IEEE.
Lai, PT; Li, CX; Xu, JP; Zou, X; Chan, CL2006682
 
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