| Title | Author(s) | Year | View Count |
 | Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric | Zou, X; Xu, JP; Lai, PT; Li, Y; Ji, F; Deng, LF | 2010 | 95 |
| Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations | Ji, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X | 2010 | 90 |
| Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment | Xu, JP; Zou, X; Li, CX; Lai, PT; Chan, CL | 2009 | 73 |
| Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness | Xu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL | 2009 | 81 |
| Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment | Li, CX; Zou, X; Xu, JP; Lai, PT | 2008 | 186 |
 | Effects of Post deposited Annealing on Ge MOS Capacitors with Sub-nm EOT HfTiO Gate Dielectric | Zou, X; Xu, J; Lai, PT; Li, C | 2008 | 105 |
| A New Interleaver Design for Iteratively Decoded Bit-Interleaved Coded Modulation | Zou, X; Wang, M; Feng, G | 2008 | 149 |
| Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric | Zou, X; Xu, JP; Lai, PT; Li, CX | 2008 | 50 |
| Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric | Li, CX; Zou, X; Lai, PT; Xu, JP; Chan, CL | 2008 | 62 |
 | Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor | Zou, X; Xu, JP; Li, CX; Lai, PT | 2007 | 288 |
| A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer | Zou, X; Xu, JP; Li, CX; Lai, PT; Chen, WB | 2007 | 69 |
| Gate-leakage model of Ge MOS capacitor with high-k gate dielectric | Zou, X; Xu, JP; Lai, PT; Li, CX; Zhang, XF | 2007 | 83 |
| Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients | Lai, PT; Xu, JP; Li, CX; Zou, X; Chen, WB | 2007 | 64 |
| Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric | Li, CX; Lai, PT; Xu, JP; Zou, X | 2007 | 92 |
| Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs | Zhang, XF; Xu, JP; Lai, PT; Zou, X; Li, CX | 2007 | 105 |
| Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient | Lai, PT; Li, CX; Xu, JP; Zou, X; Chan, CL | 2006 | 648 |
| Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric | Zou, X; Xu, JP; Lai, PT; Li, C; Zhang, XF | 2006 | 109 |
| Preparation of high-quality gate dielectrics for Ge MOSFETs in wet ambients | Lai, PT; Xu, JP; Li, C; Zou, X; Chen, WB | 2006 | 83 |
| Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric | Zou, X; Li, C; Xu, JP; Lai, PT; Chen, WB | 2006 | 124 |
| Threshold voltage model of SiGe channel pMOSFET without Si cap layer | Zou, X; Li, CX; Xu, JP; Lai, PT; Chen, WB | 2006 | 71 |
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