Browsing by Author Zou, X

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TitleAuthor(s)Issue DateViews
 
1998
68
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
2007
61
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
2008
35
 
2008
75
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
96
 
2006
76
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
54
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:Proceedings of 8th ICSICT
2006
42
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
87
 
2006
428
 
2009
90
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
73
 
2008
49
 
Optimization of Tree-like Core Overlay in Hybrid-structured Application-layer Multicast
Journal:KSII Transactions on Internet and Information Systems
2012
37
 
2000
89
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006
2007
59
 
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
2005
80
 
2007
78
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
2006
57
 
2007
93