| Title | Author(s) | Year | View Count |
 | Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAs | Luo, YL; Zhao, YW; Fung, S; Beling, CD | 2003 | 127 |
 | Positron-annihilation study of compensation defects in InP | Shan, YY; Deng, AH; Ling, CC; Fung, S; Ling, CD; Zhao, YW; Sun, TN; Sun, NF | 2002 | 293 |
| Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence | Ling, CC; Mui, WK; Lam, CH; Beling, CD; Fung, S; Lui, MK; Cheah, KW; Li, KF; Zhao, YW; Gong, M | 2002 | 431 |
| Creation and suppression of point defects through a kick-out substitution process of Fe in InP | Zhao, YW; Dong, HW; Chen, YH; Zhang, YH; Jiao, JH; Zhao, JQ; Lin, LY; Fung, S | 2002 | 472 |
| Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence | Mui, WK; Lui, MK; Ling, CC; Beling, CD; Fung, S; Cheah, KW; Li, KF; Zhao, YW | 2002 | 448 |
| A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP | Shan, YY; Deng, AH; Zhao, YW; Ling, CC; Fung, S; Beling, CD | 2001 | 131 |
| Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP | Zhao, YW; Luo, YL; Fung, S; Beling, CD; Sun, NF; Chen, XD; Cao, LX; Sun, TN; Bi, K; Wu, X | 2001 | 574 |
| Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system | Xu, XL; Beling, CD; Fung, S; Zhao, YW; Sun, NF; Sun, TN; Zhang, QL; Zhan, HH; Sun, BQ; Wang, JN; Ge, WK; Wong, PC | 2000 | 290 |
| Electrical conduction in annealed semi-insulating InP | Fung, S; Zhao, YW; Luo, YL; Beling, CD | 2000 | 283 |
| Carrier mobility distribution in annealed undoped LEC InP material | Zhao, YW; Fung, S; Beling, CD; Sun, NF; Chen, XD; Sun, TN; Zhang, J; Bi, K; Wu, X | 2000 | 159 |
| Effects of annealing on the electrical properties of Fe-doped InP | Zhao, YW; Fung, S; Beling, CD; Sun, NF; Sun, TN; Chen, XD; Yang, GY | 1999 | 357 |
| Thermally induced conduction type conversion in n-type InP | Fung, S; Zhao, YW; Beling, CD; Xu, XL; Sun, NF; Sun, TN; Chen, XD | 1999 | 295 |
| Compensation defects in annealed undoped liquid encapsulated Czochralski InP | Fung, S; Zhao, YW; Xu, XL; Chen, XD; Sun, NF; Sun, TN; Zhang, RG; Liu, SL; Yang, GY; Guo, XB; Sun, YZ; Yan, RY; Hua, QH | 1999 | 490 |
| Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts | Chen, XD; Sun, NF; Sun, TN; Liu, SL; Yang, GY; Zhao, YW; Xu, XL; Beling, CD; Fung, S | 1998 | 391 |
| Positron-lifetime study of compensation defects in undoped semi-insulating InP | Beling, CD; Deng, AH; Shan, YY; Zhao, YW; Fung, S; Sun, NF; Sun, TN; Chen, XD | 1998 | 482 |
| Formation of P In defect in annealed liquid-encapsulated Czochralski InP | Zhao, YW; Xu, XL; Gong, M; Fung, S; Beling, CD; Chen, XD; Sun, NF; Sun, TN; Liu, SL; Yang, GY; Guo, XB; Sun, YZ; Wang, L; Zheng, QY; Zhou, ZH; Chen, J | 1998 | 476 |
| Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP | Fung, S; Zhao, YW; Beling, CD; Xu, XL; Gong, M; Sun, NF; Sun, TN; Chen, XD; Zhang, RG; Liu, SL; Yang, GY; Qian, JJ; Sun, MF; Liu, XL | 1998 | 510 |
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