Results 1 to 17 of 17
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TypeTitleAuthor(s)YearViews
Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAsLuo, YL; Zhao, YW; Fung, S; Beling, CD2003119
 
Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescenceMui, WK; Lui, MK; Ling, CC; Beling, CD; Fung, S; Cheah, KW; Li, KF; Zhao, YW2002436
 
Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescenceLing, CC; Mui, WK; Lam, CH; Beling, CD; Fung, S; Lui, MK; Cheah, KW; Li, KF; Zhao, YW; Gong, M2002454
 
Creation and suppression of point defects through a kick-out substitution process of Fe in InPZhao, YW; Dong, HW; Chen, YH; Zhang, YH; Jiao, JH; Zhao, JQ; Lin, LY; Fung, S2002467
 
Positron-annihilation study of compensation defects in InPShan, YY; Deng, AH; Ling, CC; Fung, S; Ling, CD; Zhao, YW; Sun, TN; Sun, NF2002285
 
Native donors and compensation in Fe-doped liquid encapsulated Czochralski InPZhao, YW; Luo, YL; Fung, S; Beling, CD; Sun, NF; Chen, XD; Cao, LX; Sun, TN; Bi, K; Wu, X2001576
 
A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InPShan, YY; Deng, AH; Zhao, YW; Ling, CC; Fung, S; Beling, CD2001129
 
Carrier mobility distribution in annealed undoped LEC InP materialZhao, YW; Fung, S; Beling, CD; Sun, NF; Chen, XD; Sun, TN; Zhang, J; Bi, K; Wu, X2000134
 
Electrical conduction in annealed semi-insulating InPFung, S; Zhao, YW; Luo, YL; Beling, CD2000287
 
Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire systemXu, XL; Beling, CD; Fung, S; Zhao, YW; Sun, NF; Sun, TN; Zhang, QL; Zhan, HH; Sun, BQ; Wang, JN; Ge, WK; Wong, PC2000289
 
Thermally induced conduction type conversion in n-type InPFung, S; Zhao, YW; Beling, CD; Xu, XL; Sun, NF; Sun, TN; Chen, XD1999299
 
Effects of annealing on the electrical properties of Fe-doped InPZhao, YW; Fung, S; Beling, CD; Sun, NF; Sun, TN; Chen, XD; Yang, GY1999341
 
Compensation defects in annealed undoped liquid encapsulated Czochralski InPFung, S; Zhao, YW; Xu, XL; Chen, XD; Sun, NF; Sun, TN; Zhang, RG; Liu, SL; Yang, GY; Guo, XB; Sun, YZ; Yan, RY; Hua, QH1999491
 
Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InPFung, S; Zhao, YW; Beling, CD; Xu, XL; Gong, M; Sun, NF; Sun, TN; Chen, XD; Zhang, RG; Liu, SL; Yang, GY; Qian, JJ; Sun, MF; Liu, XL1998524
 
Formation of P In defect in annealed liquid-encapsulated Czochralski InPZhao, YW; Xu, XL; Gong, M; Fung, S; Beling, CD; Chen, XD; Sun, NF; Sun, TN; Liu, SL; Yang, GY; Guo, XB; Sun, YZ; Wang, L; Zheng, QY; Zhou, ZH; Chen, J1998440
 
Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric meltsChen, XD; Sun, NF; Sun, TN; Liu, SL; Yang, GY; Zhao, YW; Xu, XL; Beling, CD; Fung, S1998352
 
Positron-lifetime study of compensation defects in undoped semi-insulating InPBeling, CD; Deng, AH; Shan, YY; Zhao, YW; Fung, S; Sun, NF; Sun, TN; Chen, XD1998467
 
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