Results 1 to 9 of 9
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TypeTitleAuthor(s)YearViews
Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires
Journal:
Materials Characterization
Publisher:
Elsevier Inc. The Journal's web site is located at http://www.elsevier.com/locate/matchar
Ning, JQ; Xu, SJ; Wang, PW; Song, YP; Yu, DP; Shan, YY; Lee, ST; Yang, H2012212
 
Highly heteroepitaxial thin films of YBa2Cu3Oy grown on silicon with Eu2CuO4/Y-ZrO2 bi-layer buffer
Journal:
Thin Solid Films
Publisher:
Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Gao, J; Fu, E; Kang, L; Li, TK; Zhe, W; Yu, DP2008407
 
TEM study of the microstructure and interfaces in YBa2Cu3Oy thin films grown on silicon with a Eu2CuO4/Y-ZrO2 bi-layer buffer
Journal:
Surface Review and Letters
Publisher:
World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml
Gao, J; Fu, E; Luo, Z; Wang, Z; Yu, DP2007119
 
418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Ning, JQ; Xu, SJ; Yu, DP; Shan, YY; Lee, ST2007324
 
Doppler broadening of annihilation radiation spectroscopy study using Richardson-Lucy, Maximum Entropy and Huber methods
Proceedings/Conference:
Physica Status Solidi (C) Current Topics in Solid State Physics
Publisher:
Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Yu, DP; Zhang, JD; Cheng, V; Beling, CD; Fung, S2007166
 
Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: The role of localization length
Journal:
Optics Express
Publisher:
Optical Society of America. The Journal's web site is located at http://www.opticsexpress.org
Wang, YJ; Xu, SJ; Zhao, DG; Zhu, JJ; Yang, H; Shan, XD; Yu, DP2006193
 
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, SJ; Li, GQ; Wang, YJ; Zhao, Y; Chen, GH; Zhao, DG; Zhu, JJ; Yang, H; Yu, DP; Wang, JN2006548
 
Interface structure and phase of epitaxial srtio3 (110) thin films grown directly on silicon
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Hao, JH; Gao, J; Wang, Z; Yu, DP2005379
 
Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Du, AY; Li, MF; Chong, TC; Xu, SJ; Zhang, Z; Yu, DP1997126
 
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