| Title | Author(s) | Year | View Count |
 | Defects and Impurities in GaN | Xu, XL; Shi, CS; Fung, SHY; Beling, CD | 2001 | 91 |
 | Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system | Xu, XL; Beling, CD; Fung, S; Zhao, YW; Sun, NF; Sun, TN; Zhang, QL; Zhan, HH; Sun, BQ; Wang, JN; Ge, WK; Wong, PC | 2000 | 290 |
| Thermally induced conduction type conversion in n-type InP | Fung, S; Zhao, YW; Beling, CD; Xu, XL; Sun, NF; Sun, TN; Chen, XD | 1999 | 295 |
| Compensation defects in annealed undoped liquid encapsulated Czochralski InP | Fung, S; Zhao, YW; Xu, XL; Chen, XD; Sun, NF; Sun, TN; Zhang, RG; Liu, SL; Yang, GY; Guo, XB; Sun, YZ; Yan, RY; Hua, QH | 1999 | 491 |
| Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts | Chen, XD; Sun, NF; Sun, TN; Liu, SL; Yang, GY; Zhao, YW; Xu, XL; Beling, CD; Fung, S | 1998 | 392 |
| Formation of P In defect in annealed liquid-encapsulated Czochralski InP | Zhao, YW; Xu, XL; Gong, M; Fung, S; Beling, CD; Chen, XD; Sun, NF; Sun, TN; Liu, SL; Yang, GY; Guo, XB; Sun, YZ; Wang, L; Zheng, QY; Zhou, ZH; Chen, J | 1998 | 478 |
| Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP | Fung, S; Zhao, YW; Beling, CD; Xu, XL; Gong, M; Sun, NF; Sun, TN; Chen, XD; Zhang, RG; Liu, SL; Yang, GY; Qian, JJ; Sun, MF; Liu, XL | 1998 | 511 |
 | Optical transitions in germanium dioxide | Xu, XL; Zhu, LX; Chen, TP; Fung, S; Li, SM | 1996 | 158 |
| Cathodoluminescence from interband transitions in germanium (111) and gallium arsenide (100) crystals | Xu, XL; Hao, LY; Xu, KZ; Chen, TP; Fung, S | 1995 | 723 |
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