| Title | Author(s) | Year | View Count |  | A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects | Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG; Guan, JG | 2008 | 155 |
| Gate leakage properties of MOS devices with tri-layer high-k gate dielectric | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG | 2007 | 135 |
| Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG; Chan, CL | 2006 | 100 |
| A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects | Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG | 2006 | 117 |
| Gate leakage properties of MOS devices with TriLayer high-k gate dielectric | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG | 2006 | 80 |
|
