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TypeTitleAuthor(s)YearViews
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effectsXu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG; Guan, JG2008169
 
Gate leakage properties of MOS devices with tri-layer high-k gate dielectricChen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG2007116
 
Gate leakage properties of MOS devices with TriLayer high-k gate dielectricChen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG200680
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayerChen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG; Chan, CL2006103
 
A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effectsXu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG2006130
 
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