| Title | Author(s) | Year | View Count |
 | Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric | Deng, LF; Liu, YR; Choi, HW; Xu, JP; Che, CM; Lai, PT | 2012 | 95 |
 | Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer | Ji, F; Xu, JP; Lai, PT; Li, CX; Liu, JG | 2011 | 82 |
| Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer | Ji, F; Xu, JP; Liu, JG; Li, CX; Lai, PT | 2011 | 62 |
| A novel MONOS memory with high-κ HfLaON as charge-storage layer | Liu, L; Xu, JP; Ji, F; Huang, XD; Lai, PT | 2011 | 100 |
| Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications | Huang, XD; Lai, PT; Liu, L; Xu, JP | 2011 | 72 |
| Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications | Huang, XD; Liu, L; Xu, JP; Lai, PT | 2011 | 70 |
| Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films | Huang, XD; Liu, L; Xu, JP; Lai, PT | 2011 | 79 |
| Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric | Deng, LF; Lai, PT; Chen, WB; Xu, JP; Liu, YR; Choi, HW; Che, CM | 2011 | 96 |
| Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric | Zou, X; Xu, JP; Lai, PT; Li, Y; Ji, F; Deng, LF | 2010 | 95 |
| Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric | Deng, LF; Lai, PT; Tao, QB; Choi, HW; Xu, JP; Chen, WB; Che, CM; Liu, YR | 2010 | 73 |
| Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory | Liu, L; Xu, JP; Huang, XD; Ji, F; Lai, PT | 2010 | 72 |
| Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations | Ji, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X | 2010 | 90 |
| Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3 | Deng, LF; Lai, PT; Xu, JP; Choi, HW; Chen, WB; Che, CM | 2010 | 75 |
| A simplified post-soft-breakdown current model for MOS devices | Li, ZL; Xu, JP; Lai, PT | 2009 | 147 |
| A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric | Ji, F; Xu, JP; Lai, PT; Guan, JG | 2008 | 62 |
| A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect | Ji, F; Xu, JP; Lai, PT | 2007 | 76 |
| Improved performance for OTFT with HfTiO 2 as gate dielectric by N 2O annealing | Tang, WM; Cheng, KH; Leung, CH; Lai, PT; Xu, JP; Che, CM | 2007 | 48 |
| Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric | Li, CX; Lai, PT; Xu, JP; Zou, X | 2007 | 92 |
| Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient | Lai, PT; Li, CX; Xu, JP; Zou, X; Chan, CL | 2006 | 648 |
| Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation | Yang, BL; Lin, LM; Xu, JP; Lai, PT | 2006 | 751 |
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