Results 1 to 20 of 26
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TypeTitleAuthor(s)YearViews
Artificial Topological Superconductor by the Proximity Effect
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
Xu, JP; Liu, CH; Wang, MX; Ge, JF; Liu, ZL; Yang, XJ; Chen, Y; Liu, Y; Xu, ZA; Gao, CL; Qian, D; Zhang, F; Jia, JF20141
 
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Journal:
IEEE Transactions on Device and Materials Reliability
Publisher:
IEEE
Deng, LF; Liu, YR; Choi, HW; Xu, JP; Che, CM; Lai, PT2012178
 
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:
IEEE Electron Device Letters
Publisher:
I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Ji, F; Xu, JP; Lai, PT; Li, CX; Liu, JG2011126
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Ji, F; Xu, JP; Liu, JG; Li, CX; Lai, PT2011113
 
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric
Proceedings/Conference:
IEEE Electron Device Letters
Publisher:
I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Deng, LF; Lai, PT; Chen, WB; Xu, JP; Liu, YR; Choi, HW; Che, CM2011176
 
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Liu, L; Xu, JP; Huang, XD; Ji, F; Lai, PT201092
 
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Deng, LF; Lai, PT; Tao, QB; Choi, HW; Xu, JP; Chen, WB; Che, CM; Liu, YR2010168
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X2010173
 
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3
Proceedings/Conference:
ECS Transactions
Deng, LF; Lai, PT; Xu, JP; Choi, HW; Chen, WB; Che, CM2010105
 
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Zou, X; Xu, JP; Lai, PT; Li, Y; Ji, F; Deng, LF2010195
 
A simplified post-soft-breakdown current model for MOS devices
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Li, ZL; Xu, JP; Lai, PT2009188
 
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Ji, F; Xu, JP; Lai, PT; Guan, JG2008116
 
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:
Chinese Physics
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Ji, F; Xu, JP; Lai, PT2007130
 
Improved performance for OTFT with HfTiO 2 as gate dielectric by N 2O annealing
Proceedings/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Tang, WM; Cheng, KH; Leung, CH; Lai, PT; Xu, JP; Che, CM200779
 
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceedings/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Li, CX; Lai, PT; Xu, JP; Zou, X2007116
 
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Tang, WM; Leung, CH; Lai, PT; Xu, JP2006136
 
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG2006107
 
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X; Li, CX; Xu, JP; Lai, PT; Chen, WB2006104
 
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher:
IEEE.
Yang, BL; Lin, LM; Xu, JP; Lai, PT2006750
 
A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG2006171
 
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