| Title | Author(s) | Year | View Count |
 | Study of GaN/SiC contact using slow positron beam | Wang, HY; Weng, HM; Ling, CC | 2008 | 519 |
| Performance of a slow positron beam using a hybrid lens design | Cheung, CK; Naik, PS; Beling, CD; Fung, S; Weng, HM | 2006 | 152 |
| Al/GaSb contact with slow positron beam | Wang, HY; Weng, HM; Ling, CC; Ye, BJ; Zhou, XY | 2006 | 27 |
 | Deep level defects in 6H silicon carbide induced by particles irradiations | Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM | 2005 | 189 |
| Annealing study of A1/GaSb contact with the use of doppler broadening technique | Wang, H; Weng, HM; Ling, FCC; Ye, BJ; Zhou, XY; Han, RD | 2005 | 165 |
 | Deep-level defects in n-type 6H silicon carbide induced by He implantation | Ling, CC; Chen, XD; Brauer, G; Anwand, W; Skorupa, W; Wang, HY; Weng, HM | 2005 | 103 |
| Annealing study of Al/GaSb contact with the use of doppler broadening technique | Wang, HY; Weng, HM; Ling, CC; Ye, BJ; Zhou, XY; Han, RD | 2005 | 35 |
| Microstructure of carbon filled HDPE/EPDM composites studied by positron annihilation spectroscopy | Weng, HM; Jia, SJ; Ye, BJ; Zhang, XF; Han, RD; Wang, XY; Zhou, HY; Zhang, ZC; Ling, CC | 2004 | 139 |
| Millimeter positron focusing using a hybrid lens design | Cheung, CK; Kwan, PY; Shan, YY; Naik, PS; Weng, HM; Beling, CD; Fung, S | 2004 | 141 |
| Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence | Ma, SK; Lui, MK; Ling, CC; Fung, S; Beling, CD; Li, KF; Cheah, KW; Gong, M; Hang, HS; Weng, HM | 2004 | 151 |
| Tungsten mesh as positron transmission moderator in a monoenergetic positron beam | Weng, HM; Ling, CC; Beling, CD; Fung, S; Cheung, CK; Kwan, PY; Hui, IP | 2004 | 135 |
| Identities of the deep level defects E1/E2 in 6H silicon carbide | Ling, FCC; Chen, X; Gong, M; Weng, HM; Hang, DS; Beling, CD; Fung, SHY; Lam, TW; Lam, CH | 2004 | 133 |
| Identities of the deep level defects E 1/E 2 in 6H silicon carbide | Ling, CC; Chen, XD; Gong, M; Weng, HM; Hang, DS; Beling, CD; Fung, S; Lam, TW; Lam, CH | 2004 | 36 |
| Vacancy in 6H-silicon carbide studied by slow positron beam | Wang, HY; Weng, HM; Hang, DS; Zhou, XY; Ye, BJ; Fan, YM; Han, RD; Ling, CC; Hui, YP | 2003 | 163 |
| Undoped gallium antimonide studied by positron annihilation spectroscopy | Ma, SK; Ling, CC; Weng, HM; Hang, DS | 2003 | 297 |
| Is the Ga vacancy related defect the residual acceptor of gallium antimonide? | Ling, FCC; Chen, X; Weng, HM; Hang, DS; Lui, MKP; Lam, CH; Cheah, KW; Li, KF; Mui, WK; Beling, CD; Fung, SHY | 2003 | 143 |
| Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy | Lam, CH; Ling, CC; Beling, CD; Fung, S; Weng, HM; Hang, DS | 2003 | 344 |
| Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces | Ling, CC; Weng, HM; Beling, CD; Fung, S | 2002 | 149 |
| A compact mono-energetic positron beam for re-emitted positron measurement | Weng, HM; Ling, CC; Hui, IP; Beling, CD; Fung, S | 2002 | 132 |
| Bi-directional phase transition of Cu/6H-SiC(0 0 0 1) system discovered by positron beam study | Zhang, JD; Weng, HM; Shan, YY; Ching, HM; Beling, CD; Fung, S; Ling, CC | 2002 | 162 |
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