Results 1 to 8 of 8
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TypeTitleAuthor(s)YearViews
Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation SpectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Hu, YF; Beling, CD; Fung, S; Weng, HM2000411
 
Interface characterization and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annihilation spectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Chan, FYM; Lin, SH; Hu, YF; Beling, CD; Fung, S199948
 
Identification of vacancy-like defects in high-rate grown a-Si before and after light soaking by VEPASZou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, S199957
 
Interface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Chan, FYM; Lin, SH; Hu, YF; Beling, CD; Fung, SHY1999413
 
Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepasZou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, SHY1999374
 
Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadeningZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Gong, M; Beling, CD; Fung, S199858
 
Probing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopyZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Fung, S; Beling, CD199853
 
Study of microvoids in high-rate a-Si:H using positron annihilationZou, X; Webb, DP; Lin, SH; Lam, YW; Chan, YC; Hu, YF; Beling, CD; Fung, SHY1997343
 
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