Browse by Author Webb, DP

TitleAuthor(s)YearView Count
Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation SpectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Hu, YF; Beling, CD; Fung, S; Weng, HM2000414
Interface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Chan, FYM; Lin, SH; Hu, YF; Beling, CD; Fung, SHY1999397
Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepasZou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, SHY1999351
Interface characterization and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annihilation spectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Chan, FYM; Lin, SH; Hu, YF; Beling, CD; Fung, S199929
Identification of vacancy-like defects in high-rate grown a-Si before and after light soaking by VEPASZou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, S199933
Probing of Microvoids in High-Rate Deposited a-Si:H Thin Films by Variable Energy Positron Annihilation SpectroscopyZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, Y; Fung, SHY; Beling, CD1998103
Depth Profiling of Vacancy-Type Defects in Homogenous and Mutlilayered a-Si Films by Positron Beam Doppler BroadeningZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, Y; Gong, M; Beling, CD; Fung, SHY1998120
Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadeningZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Gong, M; Beling, CD; Fung, S199830
Probing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopyZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Fung, S; Beling, CD199828
Study of microvoids in high-rate a-Si:H using positron annihilationZou, X; Webb, DP; Lin, SH; Lam, YW; Chan, YC; Hu, YF; Beling, CD; Fung, SHY1997333