| Title | Author(s) | Year | View Count |
 | Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy | Guo, X; Xu, Z; Liu, HC; Zhao, B; Dai, XQ; He, HT; Wang, JN; Liu, H; Ho, WK; Xie, MH | 2013 | 1 |
 | Formation dynamics of excitons and temporal behaviors of fano resonance due to the exciton-impurity-phonon configuration interaction in ZnO | Zheng, CC; Xu, SJ; Ning, JQ; Chen, YN; Li, BK; Wang, JN; Che, CM | 2012 | 160 |
 | Impurity effect on weak antilocalization in the topological insulator Bi 2Te 3 | He, HT; Wang, G; Zhang, T; Sou, IK; Wong, GKL; Wang, JN; Lu, HZ; Shen, SQ; Zhang, FC | 2011 | 1,588 |
| The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator | Li, HD; Wang, ZY; Kan, X; Guo, X; He, HT; Wang, Z; Wang, JN; Wong, TL; Wang, N; Xie, MH | 2010 | 371 |
| Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy | Ding, L; Li, BK; He, HT; Ge, WK; Wang, JN; Ning, JQ; Dai, XM; Ling, CC; Xu, SJ | 2009 | 655 |
| Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation | Ling, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN | 2006 | 193 |
| Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots | Xu, SJ; Li, GQ; Wang, YJ; Zhao, Y; Chen, GH; Zhao, DG; Zhu, JJ; Yang, H; Yu, DP; Wang, JN | 2006 | 474 |
| Deep level defects in 6H silicon carbide induced by particles irradiations | Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM | 2005 | 189 |
| Deep level defects in 6H silicon carbide | Ling, FCC; Chen, X; Fung, SHY; Beling, CD; Gong, M; Ge, WK; Wang, JN; Brauer, G; Anwand, W; Skorupa, W | 2004 | 133 |
| Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2 | Chen, XD; Yang, CL; Gong, M; Ge, WK; Fung, S; Beling, CD; Wang, JN; Lui, MK; Ling, CC | 2004 | 719 |
| Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system | Xu, XL; Beling, CD; Fung, S; Zhao, YW; Sun, NF; Sun, TN; Zhang, QL; Zhan, HH; Sun, BQ; Wang, JN; Ge, WK; Wong, PC | 2000 | 290 |
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