Results 1 to 14 of 14
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TypeTitleAuthor(s)YearViews
Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Guo, X; Xu, Z; Liu, HC; Zhao, B; Dai, XQ; He, HT; Wang, JN; Liu, H; Ho, WK; Xie, MH2013213
 
Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Su, S; Zhu, H; Zhang, LX; He, M; Zhao, LZ; Yu, SF; Wang, JN; Ling, CC201360
 
Anisotropic Topological Surface States on High-Index Bi2Se3 Films
Journal:
Advanced Materials (Communication)
Publisher:
WILEY-VCH Verlag GmbH & Co. KGaA.
Xu, Z; Guo, X; Yao, MY; He, HT; Miao, L; Jiao, L; Liu, HC; Wang, JN; Qian, D; Jia, JF; Ho, WK; Xie, MH2013165
 
Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films
Journal:
Applied Physics Letters
Publisher:
AIP Publishing LCC. The Journal's web site is located at http://apl.aip.org/
He, HT; Liu, HC; Li, BK; GUO, X; Xu, Z; Xie, MH; Wang, JN2013153
 
Formation dynamics of excitons and temporal behaviors of fano resonance due to the exciton-impurity-phonon configuration interaction in ZnO
Journal:
Journal of Physical Chemistry A
Publisher:
American Chemical Society. The Journal's web site is located at http://pubs.acs.org/jpca
Zheng, CC; Xu, SJ; Ning, JQ; Chen, YN; Li, BK; Wang, JN; Che, CM2012238
 
Impurity effect on weak antilocalization in the topological insulator Bi 2Te 3
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
He, HT; Wang, G; Zhang, T; Sou, IK; Wong, GKL; Wang, JN; Lu, HZ; Shen, SQ; Zhang, FC20111,669
 
The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator
Journal:
New Journal of Physics
Publisher:
Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJP
Li, HD; Wang, ZY; Kan, X; Guo, X; He, HT; Wang, Z; Wang, JN; Wong, TL; Wang, N; Xie, MH2010505
 
Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
Journal:
Journal of Applied Physics
Publisher:
American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Ding, L; Li, BK; He, HT; Ge, WK; Wang, JN; Ning, JQ; Dai, XM; Ling, CC; Xu, SJ2009683
 
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, SJ; Li, GQ; Wang, YJ; Zhao, Y; Chen, GH; Zhao, DG; Zhu, JJ; Yang, H; Yu, DP; Wang, JN2006555
 
Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation
Proceedings/Conference:
Physica B: Condensed Matter
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Ling, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN2006202
 
Deep level defects in 6H silicon carbide induced by particles irradiations
Proceedings/Conference:
15th National Conference of Semiconductor Physics, Chengdu, China, Oct 16-19, 2005
Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM2005203
 
Deep level defects in 6H silicon carbide
Journal:
物理
Publisher:
中国科学院物理研究所. The Journal's web site is located at http://wl.periodicals.net.cn/default.html
Ling, CC; Chen, XD; Fung, SHY; Beling, CD; Gong, M; Ge, WK; Wang, JN; Brauer, G; Anwand, W; Skorupa, W2004155
 
Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
Chen, XD; Yang, CL; Gong, M; Ge, WK; Fung, S; Beling, CD; Wang, JN; Lui, MK; Ling, CC2004780
 
Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, XL; Beling, CD; Fung, S; Zhao, YW; Sun, NF; Sun, TN; Zhang, QL; Zhan, HH; Sun, BQ; Wang, JN; Ge, WK; Wong, PC2000325
 
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