| Title | Author(s) | Year | View Count |  | Charge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devices | Yang, M; Chen, TP; Wong, JI; Liu, Y; Tseng, AA; Fung, S | 2010 | 187 |
| Energy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO 2 matrix | Chen, TP; Liu, Y; Sun, CQ; Tseng, AA; Fung, S | 2007 | 32 |
 | Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures | Liu, Y; Chen, TP; Ng, CY; Ding, L; Tse, MS; Fung, S; Tseng, AA | 2006 | 694 |
| Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams | Ng, CY; Chen, TP; Zhao, P; Ding, L; Liu, Y; Tseng, AA; Fung, S | 2006 | 852 |
| Si ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides | Ng, CY; Chen, TP; Ding, L; Chen, Q; Liu, Y; Zhao, P; Tseng, AA; Fung, SHY | 2006 | 754 |
| Influence of silicon-nanocrystal distribution in SiO 2 matrix on charge injection and charge decay | Ng, CY; Chen, TP; Tse, MS; Lim, VSW; Fung, S; Tseng, AA | 2005 | 573 |
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