Results 1 to 20 of 26
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TypeTitleAuthor(s)YearViews
Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowiresNing, JQ; Xu, SJ; Wang, PW; Song, YP; Yu, DP; Shan, YY; Lee, ST; Yang, H2012146
 
418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?Ning, JQ; Xu, SJ; Yu, DP; Shan, YY; Lee, ST2007250
 
Millimeter positron focusing using a hybrid lens designCheung, CK; Kwan, PY; Shan, YY; Naik, PS; Weng, HM; Beling, CD; Fung, S2004150
 
Bi-directional phase transition of Cu/6H-SiC(0 0 0 1) system discovered by positron beam studyZhang, JD; Weng, HM; Shan, YY; Ching, HM; Beling, CD; Fung, S; Ling, CC2002144
 
A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse biasLing, CC; Fung, S; Beling, CD; Shan, YY; Deng, AH2002120
 
Application of positron annihilation lifetime technique to the study of deep level transients in semiconductorsDeng, AH; Shan, YY; Fung, S; Beling, CD2002441
 
Positron-annihilation study of compensation defects in InPShan, YY; Deng, AH; Ling, CC; Fung, S; Ling, CD; Zhao, YW; Sun, TN; Sun, NF2002285
 
GaN thin films on SiC substrates studied using variable energy positron annihilation spectroscopyHu, YF; Shan, YY; Beling, CD; Fung, S; Xie, MH; Cheung, SH; Tu, J; Brauer, G; Anwand, W; Tong, DSY2001132
 
A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InPShan, YY; Deng, AH; Zhao, YW; Ling, CC; Fung, S; Beling, CD2001129
 
On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopyBeling, CD; LiMing, W; Shan, YY; Cheung, SH; Fung, S; Panda, BK; Seitsonen, AP199893
 
Study of DX center in Cd0.8Zn0.2Te:CI by positron annihilationFung, S; Shan, YY; Deng, AH; Ling, CC; Beling, CD; Lynn, KG199854
 
Positron-lifetime study of compensation defects in undoped semi-insulating InPBeling, CD; Deng, AH; Shan, YY; Zhao, YW; Fung, S; Sun, NF; Sun, TN; Chen, XD1998466
 
The Microscopic Structure of DX Centers in cd0.8Zn0.2Te:ClShan, YY; Lynn, KG; Szeles, C; Asoka-Kumar, P; Thio, T; Bennett, JW; Beling, CD; Fung, SHY; Becla, P1997117
 
Microscopic structure of DX centers in Cd 0.8Zn 0.2Te:ClShan, YY; Lynn, KG; Szeles, Cs; AsokaKumar, P; Thio, T; Bennett, JW; Beling, CB; Fung, S; Becla, P199764
 
Microscopic Structure of DX Centers in Cd0.8Zn0.2Te:ClShan, YY; Lynn, KG; Szeles, C; Asoka-Kumar, P; Thio, T; Bennett, JW; Beling, CD; Fung, SHY; Becla, P1997587
 
EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopyShan, YY; Ling, CC; Deng, AH; Panda, BK; Beling, CD; Fung, S1997343
 
Low-temperature positron transport in semi-insulating GaAsShan, YY; Lynn, KG; AsokaKumar, P; Fung, S; Beling, CB1997490
 
The microscopic structure of DX centers in Cd 0.8Zn 0.2Te:ClShan, YY; Lynn, KG; Szeles, Cs; AsokaKumar, P; Thio, T; Bennett, JW; Beling, CB; Fung, S; Becla, P199757
 
Field effect on positron diffusion in semi-insulating GaAsShan, YY; AsokaKumar, P; Lynn, KG; Fung, S; Beling, CD1996434
 
Doppler-broadening measurements of microvoids at the Au/GaAs interfaceLing, CC; Shan, YY; Panda, BK; Fleischer, S; Beling, CD; Fung, S1995110
 
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