| Title | Author(s) | Year | View Count |  | Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires | Ning, JQ; Xu, SJ; Wang, PW; Song, YP; Yu, DP; Shan, YY; Lee, ST; Yang, H | 2012 | 104 |
 | 418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration? | Ning, JQ; Xu, SJ; Yu, DP; Shan, YY; Lee, ST | 2007 | 266 |
| Millimeter positron focusing using a hybrid lens design | Cheung, CK; Kwan, PY; Shan, YY; Naik, PS; Weng, HM; Beling, CD; Fung, S | 2004 | 150 |
| Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors | Deng, AH; Shan, YY; Fung, S; Beling, CD | 2002 | 460 |
| Positron-annihilation study of compensation defects in InP | Shan, YY; Deng, AH; Ling, CC; Fung, S; Ling, CD; Zhao, YW; Sun, TN; Sun, NF | 2002 | 301 |
| Bi-directional phase transition of Cu/6H-SiC(0 0 0 1) system discovered by positron beam study | Zhang, JD; Weng, HM; Shan, YY; Ching, HM; Beling, CD; Fung, S; Ling, CC | 2002 | 172 |
| A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias | Ling, CC; Fung, S; Beling, CD; Shan, YY; Deng, AH | 2002 | 159 |
| A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP | Shan, YY; Deng, AH; Zhao, YW; Ling, CC; Fung, S; Beling, CD | 2001 | 135 |
| GaN thin films on SiC substrates studied using variable energy positron annihilation spectroscopy | Hu, YF; Shan, YY; Beling, CD; Fung, S; Xie, MH; Cheung, SH; Tu, J; Brauer, G; Anwand, W; Tong, DSY | 2001 | 137 |
| Study of DX center in Cd0.8Zn0.2Te:Cl by positron annihilation | Fung, SHY; Shan, YY; Deng, A; Ling, FCC; Beling, CD; Lynn, KG | 1998 | 405 |
| Positron-lifetime study of compensation defects in undoped semi-insulating InP | Beling, CD; Deng, AH; Shan, YY; Zhao, YW; Fung, S; Sun, NF; Sun, TN; Chen, XD | 1998 | 490 |
| On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy | Beling, CD; LiMing, W; Shan, YY; Cheung, SH; Fung, S; Panda, BK; Seitsonen, AP | 1998 | 98 |
| Study of DX center in Cd0.8Zn0.2Te:CI by positron annihilation | Fung, S; Shan, YY; Deng, AH; Ling, CC; Beling, CD; Lynn, KG | 1998 | 42 |
| Microscopic Structure of DX Centers in Cd0.8Zn0.2Te:Cl | Shan, YY; Lynn, KG; Szeles, C; Asoka-Kumar, P; Thio, T; Bennett, JW; Beling, CD; Fung, SHY; Becla, P | 1997 | 600 |
| Low-temperature positron transport in semi-insulating GaAs | Shan, YY; Lynn, KG; AsokaKumar, P; Fung, S; Beling, CB | 1997 | 515 |
| EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy | Shan, YY; Ling, CC; Deng, AH; Panda, BK; Beling, CD; Fung, S | 1997 | 356 |
 | The Microscopic Structure of DX Centers in cd0.8Zn0.2Te:Cl | Shan, YY; Lynn, KG; Szeles, C; Asoka-Kumar, P; Thio, T; Bennett, JW; Beling, CD; Fung, SHY; Becla, P | 1997 | 120 |
| Microscopic structure of DX centers in Cd 0.8Zn 0.2Te:Cl | Shan, YY; Lynn, KG; Szeles, Cs; AsokaKumar, P; Thio, T; Bennett, JW; Beling, CB; Fung, S; Becla, P | 1997 | 43 |
| The microscopic structure of DX centers in Cd 0.8Zn 0.2Te:Cl | Shan, YY; Lynn, KG; Szeles, Cs; AsokaKumar, P; Thio, T; Bennett, JW; Beling, CB; Fung, S; Becla, P | 1997 | 50 |
| Field effect on positron diffusion in semi-insulating GaAs | Shan, YY; AsokaKumar, P; Lynn, KG; Fung, S; Beling, CD | 1996 | 451 |
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