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TypeTitleAuthor(s)YearViews
Transient sensitivity of sectorial split-drain magnetic field-effect transistor
Journal:
IEEE Transactions on Magnetics
Publisher:
Institute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
Yang, Z; Siu, S; Tam, W; Kok, C; Leung, CW; Lai, PT; Wong, H; Pong, PWT201364
 
Comparison of threshold modulation in narrow MOSFETs with different isolation structures
Journal:
Solid State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Lai, PT; Cheng, YC198561
 
An analytical model for the narrow-width effect in ion-implanted MOSFETs
Journal:
Solid State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Lai, PT; Cheng, YC198496
 
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