Results 1 to 4 of 4
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TypeTitleAuthor(s)YearViews
Transient sensitivity of sectorial split-drain magnetic field-effect transistor
Journal:
IEEE Transactions on Magnetics
Publisher:
Institute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
Yang, Z; Siu, S; Tam, W; Kok, C; Leung, CW; Lai, PT; Wong, H; Pong, PWT201366
 
Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration
Proceedings/Conference:
IEEE Transactions on Magnetics
Yang, Z; Siu, SL; Tam, WS; Kok, CW; Leung, CW; Lai, PT; Wong, H; Tang, WM; Pong, PWT201383
 
Comparison of threshold modulation in narrow MOSFETs with different isolation structures
Journal:
Solid State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Lai, PT; Cheng, YC198564
 
An analytical model for the narrow-width effect in ion-implanted MOSFETs
Journal:
Solid State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Lai, PT; Cheng, YC1984106
 
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