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The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator
New Journal of Physics
Institute of Physics Publishing Ltd. The Journal's web site is located at
Li, HD; Wang, ZY; Kan, X; Guo, X; He, HT; Wang, Z; Wang, JN; Wong, TL; Wang, N; Xie, MH2010547
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