Results 1 to 20 of 20
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TypeTitleAuthor(s)YearViews
Genomic sequence based scanning for drug resistance-associated mutations and evolutionary analysis of multidrug-resistant and extensively drug-resistance Mycobacterium tuberculosis.Liu, CH; Li, HM; Lu, N; Wang, Q; Hu, YL; Yang, X; Hu, YF; Woo, PCY; Gao, GF; Zhu, B201227
 
Variable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVDHu, YF; Beling, CD; Fung, S200557
 
GaN thin films on SiC substrates studied using variable energy positron annihilation spectroscopyHu, YF; Shan, YY; Beling, CD; Fung, S; Xie, MH; Cheung, SH; Tu, J; Brauer, G; Anwand, W; Tong, DSY2001132
 
Positron annihilation spectroscopic studies of 6H silicon carbideHu, YF; Lam, CH; Ling, CC; Fung, S; Beling, CD; Weng, HM2001144
 
Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation SpectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Hu, YF; Beling, CD; Fung, S; Weng, HM2000411
 
Interface characterization and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annihilation spectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Chan, FYM; Lin, SH; Hu, YF; Beling, CD; Fung, S199948
 
Positron beam study of low-temperature-grown GaAs with aluminum delta layersFleischer, S; Hu, YF; Beling, CD; Fung, S; Smith, TL; Moulding, KM; Weng, HM; Missous, M1999163
 
A study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperatureFleischer, S; Surya, C; Hu, YF; Beling, CD; Fung, S; Smith, TL; Moulding, KM; Missous, M199964
 
Identification of vacancy-like defects in high-rate grown a-Si before and after light soaking by VEPASZou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, S199958
 
Interface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopyZou, X; Chan, YC; Webb, DP; Lam, YW; Chan, FYM; Lin, SH; Hu, YF; Beling, CD; Fung, SHY1999414
 
Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepasZou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, SHY1999374
 
Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadeningZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Gong, M; Beling, CD; Fung, S199858
 
Probing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopyZou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Fung, S; Beling, CD199854
 
Positron studies of arsenic precipitation in low-temperature GaAs grown by molecular beam epitaxyFleischer, S; Surya, C; Hu, YF; Beling, CD; Fung, S; Missous, M199751
 
An analytical approach for studying diffusion and drift effects of positrons at the metal/semi-insulating GaAs interfaceHu, YF; Fung, S; Beling, CD1997144
 
Positron mobility in semi-insulating 4H-SiCBeling, CD; Fung, S; Cheung, SH; Gong, M; Ling, CC; Hu, YF; Brauer, G1997130
 
Positron beam profiling study of the metal-GaAs interfaceLing, CC; Weng, HM; Hu, YF; Beling, CD; Fung, S1997120
 
Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beamHu, YF; Ling, CC; Beling, CD; Fung, S1997387
 
Study of microvoids in high-rate a-Si:H using positron annihilationZou, X; Webb, DP; Lin, SH; Lam, YW; Chan, YC; Hu, YF; Beling, CD; Fung, SHY1997343
 
An apparatus used to make 22Na sources for use in low-energy positron beamsWeng, HM; Hu, YF; Beling, CD; Fung, S1997148
 
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