| Title | Author(s) | Year | View Count |
 | Determination of the sign of g factors for conduction electrons using time-resolved Kerr rotation | Yang, CL; Dai, J; Ge, WK; Cui, X | 2010 | 659 |
 | Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy | Ding, L; Li, BK; He, HT; Ge, WK; Wang, JN; Ning, JQ; Dai, XM; Ling, CC; Xu, SJ | 2009 | 656 |
| Defect emissions in ZnO nanostructures | Djurišić, AB; Leung, YH; Tam, KH; Hsu, YF; Ding, L; Ge, WK; Zhong, YC; Wong, KS; Chan, WK; Tam, HL; Cheah, KW; Kwok, WM; Phillips, DL | 2007 | 287 |
| Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation | Ling, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN | 2006 | 194 |
| Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires | Leung, CY; Djurišić, AB; Leung, YH; Ding, L; Yang, CL; Ge, WK | 2006 | 162 |
| Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength | Djurišić, AB; Leung, YH; Tam, KH; Ding, L; Ge, WK; Chen, HY; Gwo, S | 2006 | 562 |
| Defects in ZnO nanorods prepared by a hydrothermal method | Tam, KH; Cheung, CK; Leung, YH; Djurišić, AB; Ling, CC; Beling, CD; Fung, S; Kwok, WM; Chan, WK; Phillips, DL; Ding, L; Ge, WK | 2006 | 250 |
| Defect emissions in ZnO nanostructures | Djurišić, AB; Leung, YH; Tarn, KH; Ding, L; Ge, WK; Chan, WK | 2005 | 183 |
| Zno nanoshells: Synthesis, structure, and optical properties | Leung, YH; Tam, KH; Djurǐić, AB; Xie, MH; Chan, WK; Lu, D; Ge, WK | 2005 | 205 |
 | Deep level defects in 6H silicon carbide induced by particles irradiations | Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM | 2005 | 189 |
| Te antisite incorporation in Zn S1-x Tex thin films | Chan, SK; Liu, HJ; Chan, CT; Zhang, ZQ; Ge, WK; Sou, IK | 2005 | 45 |
| Deep level defects in 6H silicon carbide | Ling, FCC; Chen, X; Fung, SHY; Beling, CD; Gong, M; Ge, WK; Wang, JN; Brauer, G; Anwand, W; Skorupa, W | 2004 | 133 |
| Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2 | Chen, XD; Yang, CL; Gong, M; Ge, WK; Fung, S; Beling, CD; Wang, JN; Lui, MK; Ling, CC | 2004 | 721 |
| Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system | Xu, XL; Beling, CD; Fung, S; Zhao, YW; Sun, NF; Sun, TN; Zhang, QL; Zhan, HH; Sun, BQ; Wang, JN; Ge, WK; Wong, PC | 2000 | 290 |
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