Results 1 to 14 of 14
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TypeTitleAuthor(s)YearViews
Determination of the sign of g factors for conduction electrons using time-resolved Kerr rotation
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Yang, CL; Dai, J; Ge, WK; Cui, X2010758
 
Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
Journal:
Journal of Applied Physics
Publisher:
American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Ding, L; Li, BK; He, HT; Ge, WK; Wang, JN; Ning, JQ; Dai, XM; Ling, CC; Xu, SJ2009705
 
Defect emissions in ZnO nanostructures
Journal:
Nanotechnology
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Djurišić, AB; Leung, YH; Tam, KH; Hsu, YF; Ding, L; Ge, WK; Zhong, YC; Wong, KS; Chan, WK; Tam, HL; Cheah, KW; Kwok, WM; Phillips, DL2007399
 
Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation
Proceedings/Conference:
Physica B: Condensed Matter
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Ling, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN2006230
 
Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Djurišić, AB; Leung, YH; Tam, KH; Ding, L; Ge, WK; Chen, HY; Gwo, S2006661
 
Defects in ZnO nanorods prepared by a hydrothermal method
Journal:
Journal of Physical Chemistry B
Publisher:
American Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/jpcbfk
Tam, KH; Cheung, CK; Leung, YH; Djurišić, AB; Ling, CC; Beling, CD; Fung, S; Kwok, WM; Chan, WK; Phillips, DL; Ding, L; Ge, WK2006348
 
Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires
Journal:
Journal of Crystal Growth
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Leung, CY; Djurišić, AB; Leung, YH; Ding, L; Yang, CL; Ge, WK2006209
 
Deep level defects in 6H silicon carbide induced by particles irradiations
Proceedings/Conference:
15th National Conference of Semiconductor Physics, Chengdu, China, Oct 16-19, 2005
Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM2005232
 
Defect emissions in ZnO nanostructures
Proceedings/Conference:
Proceedings of SPIE - The International Society for Optical Engineering
Publisher:
S P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Djurišić, AB; Leung, YH; Tarn, KH; Ding, L; Ge, WK; Chan, WK2005256
 
Zno nanoshells: Synthesis, structure, and optical properties
Journal:
Journal of Crystal Growth
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Leung, YH; Tam, KH; Djurǐić, AB; Xie, MH; Chan, WK; Lu, D; Ge, WK2005236
 
Te antisite incorporation in Zn S1-x Tex thin films
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Chan, SK; Liu, HJ; Chan, CT; Zhang, ZQ; Ge, WK; Sou, IK2005122
 
Deep level defects in 6H silicon carbide
Journal:
物理
Publisher:
中国科学院物理研究所. The Journal's web site is located at http://wl.periodicals.net.cn/default.html
Ling, CC; Chen, XD; Fung, SHY; Beling, CD; Gong, M; Ge, WK; Wang, JN; Brauer, G; Anwand, W; Skorupa, W2004172
 
Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
Chen, XD; Yang, CL; Gong, M; Ge, WK; Fung, S; Beling, CD; Wang, JN; Lui, MK; Ling, CC2004799
 
Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, XL; Beling, CD; Fung, S; Zhao, YW; Sun, NF; Sun, TN; Zhang, QL; Zhan, HH; Sun, BQ; Wang, JN; Ge, WK; Wong, PC2000338
 
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