Results 1 to 6 of 6
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TypeTitleAuthor(s)YearViews
Towards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface
Proceedings/Conference:
International Conference on Simulation of Semiconductor Processes and Devices
Publisher:
IEEE.
Markov, SN; Aradi, B; Yam, CY; Chen, G; Frauenheim, T20142
 
Time-dependent versus static quantum transport simulations beyond linear response
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Yam, C; Zheng, X; Chen, G; Wang, Y; Frauenheim, T; Niehaus, TA2011106
 
Theoretical prediction of topological insulators in thallium-based III-V-VI2 ternary chalcogenides
Journal:
EPL
Publisher:
Institute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
Yan, B; Liu, CX; Zhang, HJ; Yam, CY; Qi, XL; Frauenheim, T; Zhang, SC2010135
 
Local vibrational excitation through extended electronic states at a germanium surface
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
Tomatsu, K; Nakatsuji, K; Yamada, M; Komori, F; Yan, B; Yam, C; Frauenheim, T; Xu, Y; Duan, W200998
 
Comment on "valence surface electronic states on Ge(001)"
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
Yan, B; Yam, C; Da Rosa, AL; Frauenheim, T200963
 
Linear scaling time-dependent density-functional tight-binding method for absorption spectra of large systems
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Wang, F; Yam, CY; Chen, G; Wang, X; Fan, K; Niehaus, TA; Frauenheim, T2007439
 
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