Results 1 to 17 of 17
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TypeTitleAuthor(s)YearViews
Improving the performance of polymer solar cells by adjusting the crystallinity and nanoscale phase separationChen, WB; Xu, ZX; Li, K; Chui, SSY; Roy, VAL; Lai, PT; Che, CM2012113
 
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectricDeng, LF; Lai, PT; Chen, WB; Xu, JP; Liu, YR; Choi, HW; Che, CM2011125
 
Improved efficiency of organic photovoltaic MEH-PPV/PCBM device with CuPc-dopingChen, WB; Deng, MZ; Zou, HJ; Li, CY; Deng, LF; Lai, PT201095
 
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectricDeng, LF; Lai, PT; Tao, QB; Choi, HW; Xu, JP; Chen, WB; Che, CM; Liu, YR2010103
 
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3Deng, LF; Lai, PT; Xu, JP; Choi, HW; Chen, WB; Che, CM201086
 
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effectsXu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG; Guan, JG2008168
 
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatmentXu, JP; Chen, WB; Lai, PT; Li, YP; Chan, CL200776
 
Gate leakage properties of MOS devices with tri-layer high-k gate dielectricChen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG2007116
 
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambientsLai, PT; Xu, JP; Li, CX; Zou, X; Chen, WB200772
 
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layerZou, X; Xu, JP; Li, CX; Lai, PT; Chen, WB200783
 
Improving efficiency of organic photovoltaic cells with pentacene-doped CuPc layerChen, WB; Xiang, HF; Xu, ZX; Yan, BP; Roy, VAL; Che, CM; Lai, PT2007565
 
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate DielectricZou, X; Li, C; Xu, JP; Lai, PT; Chen, WB2006121
 
Gate leakage properties of MOS devices with TriLayer high-k gate dielectricChen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG200680
 
Threshold voltage model of SiGe channel pMOSFET without Si cap layerZou, X; Li, CX; Xu, JP; Lai, PT; Chen, WB200678
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayerChen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG; Chan, CL2006103
 
A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effectsXu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG2006130
 
Preparation of high-quality gate dielectrics for Ge MOSFETs in wet ambientsLai, PT; Xu, JP; Li, C; Zou, X; Chen, WB200683
 
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