| Title | Author(s) | Year | View Count |
 | Improving the performance of polymer solar cells by adjusting the crystallinity and nanoscale phase separation | Chen, WB; Xu, ZX; Li, K; Chui, SSY; Roy, VAL; Lai, PT; Che, CM | 2012 | 73 |
| Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric | Deng, LF; Lai, PT; Chen, WB; Xu, JP; Liu, YR; Choi, HW; Che, CM | 2011 | 95 |
| Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric | Deng, LF; Lai, PT; Tao, QB; Choi, HW; Xu, JP; Chen, WB; Che, CM; Liu, YR | 2010 | 72 |
| Improved efficiency of organic photovoltaic MEH-PPV/PCBM device with CuPc-doping | Chen, WB; Deng, MZ; Zou, HJ; Li, CY; Deng, LF; Lai, PT | 2010 | 81 |
| Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3 | Deng, LF; Lai, PT; Xu, JP; Choi, HW; Chen, WB; Che, CM | 2010 | 73 |
| A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects | Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG; Guan, JG | 2008 | 145 |
| Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment | Xu, JP; Chen, WB; Lai, PT; Li, YP; Chan, CL | 2007 | 76 |
| Gate leakage properties of MOS devices with tri-layer high-k gate dielectric | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG | 2007 | 129 |
 | Improving efficiency of organic photovoltaic cells with pentacene-doped CuPc layer | Chen, WB; Xiang, HF; Xu, ZX; Yan, BP; Roy, VAL; Che, CM; Lai, PT | 2007 | 568 |
| A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer | Zou, X; Xu, JP; Li, CX; Lai, PT; Chen, WB | 2007 | 69 |
| Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients | Lai, PT; Xu, JP; Li, CX; Zou, X; Chen, WB | 2007 | 63 |
| Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG; Chan, CL | 2006 | 91 |
 | Preparation of high-quality gate dielectrics for Ge MOSFETs in wet ambients | Lai, PT; Xu, JP; Li, C; Zou, X; Chen, WB | 2006 | 82 |
| Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric | Zou, X; Li, C; Xu, JP; Lai, PT; Chen, WB | 2006 | 123 |
| Threshold voltage model of SiGe channel pMOSFET without Si cap layer | Zou, X; Li, CX; Xu, JP; Lai, PT; Chen, WB | 2006 | 70 |
| A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects | Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG | 2006 | 109 |
| Gate leakage properties of MOS devices with TriLayer high-k gate dielectric | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG | 2006 | 73 |
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