Results 1 to 17 of 17
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TypeTitleAuthor(s)YearViews
Improving the performance of polymer solar cells by adjusting the crystallinity and nanoscale phase separation
Journal:
Chinese Physics B
Chen, WB; Xu, ZX; Li, K; Chui, SSY; Roy, VAL; Lai, PT; Che, CM2012186
 
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric
Proceedings/Conference:
IEEE Electron Device Letters
Publisher:
I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Deng, LF; Lai, PT; Chen, WB; Xu, JP; Liu, YR; Choi, HW; Che, CM2011186
 
Improved efficiency of organic photovoltaic MEH-PPV/PCBM device with CuPc-doping
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Chen, WB; Deng, MZ; Zou, HJ; Li, CY; Deng, LF; Lai, PT2010131
 
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Deng, LF; Lai, PT; Tao, QB; Choi, HW; Xu, JP; Chen, WB; Che, CM; Liu, YR2010183
 
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3
Proceedings/Conference:
ECS Transactions
Deng, LF; Lai, PT; Xu, JP; Choi, HW; Chen, WB; Che, CM2010110
 
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG; Guan, JG2008210
 
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Journal:
Chinese Physics
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Xu, JP; Chen, WB; Lai, PT; Li, YP; Chan, CL2007103
 
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG2007148
 
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceedings/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Lai, PT; Xu, JP; Li, CX; Zou, X; Chen, WB2007104
 
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Zou, X; Xu, JP; Li, CX; Lai, PT; Chen, WB2007137
 
Improving efficiency of organic photovoltaic cells with pentacene-doped CuPc layer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Chen, WB; Xiang, HF; Xu, ZX; Yan, BP; Roy, VAL; Che, CM; Lai, PT2007610
 
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Proceedings/Conference:
Proceedings of RIUPEEEC
Zou, X; Li, C; Xu, JP; Lai, PT; Chen, WB2006143
 
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG2006111
 
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X; Li, CX; Xu, JP; Lai, PT; Chen, WB2006110
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:
Chinese Physics
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG; Chan, CL2006141
 
Preparation of high-quality gate dielectrics for Ge MOSFETs in wet ambients
Proceedings/Conference:
Proceedings of 8th ICSICT
Lai, PT; Xu, JP; Li, C; Zou, X; Chen, WB2006100
 
A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG2006178
 
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