| Title | Author(s) | Year | View Count |
 | Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure | Zhu, W; Chen, TP; Liu, Y; Fung, SHY | 2012 | 87 |
 | A quantitative modeling of the contributions of localized surface plasmon resonance and interband transitions to absorbance of gold nanoparticles | Zhu, S; Chen, TP; Liu, YC; Liu, Y; Fung, S | 2012 | 109 |
| Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film | Hu, SG; Liu, Y; Chen, TP; Liu, Z; Yang, M; Yu, Q; Fung, S | 2012 | 66 |
| Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures | Zhu, W; Chen, TP; Yang, M; Liu, Y; Fung, SHY | 2012 | 66 |
| Flexible write-once-read-many-times memory device based on a nickel oxide thin film | Yu, Q; Liu, Y; Chen, TP; Liu, Z; Yu, YF; Lei, HW; Zhu, J; Fung, S | 2012 | 88 |
| Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films | Cen, ZH; Chen, TP; Ding, L; Liu, Z; Wong, JI; Yang, M; Goh, WP; Fung, S | 2011 | 176 |
| Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film | Liu, Y; Chen, TP; Liu, Z; Yu, YF; Yu, Q; Li, P; Fung, S | 2011 | 129 |
| Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al 2O 3/p-Si diode | Zhu, W; Chen, TP; Liu, Y; Yang, M; Fung, S | 2011 | 808 |
| Temperature dependence of resistive switching in aluminum/anodized aluminum film structure | Zhu, W; Chen, TP; Yang, M; Liu, Y; Fung, S | 2011 | 711 |
| Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films | Liu, Y; Chen, TP; Ding, L; Yang, M; Liu, Z; Wong, JI; Fung, S | 2011 | 222 |
| Competition of resistive-switching mechanisms in nickel-rich nickel oxide thin films | Yu, Q; Liu, Y; Chen, TP; Liu, Z; Yu, YF; Fung, S | 2011 | 103 |
| Charge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devices | Yang, M; Chen, TP; Wong, JI; Liu, Y; Tseng, AA; Fung, S | 2010 | 175 |
| A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals | Liu, Y; Chen, TP; Ding, L; Li, YB; Zhang, S; Fung, S | 2010 | 190 |
| CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals | Liu, Y; Chen, TP; Yang, M; Cen, ZH; Chen, XB; Li, YB; Fung, S | 2009 | 888 |
| Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions | Cen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S | 2009 | 439 |
| Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions | Cen, ZH; Chen, TP; Ding, L; Ye, JD; Liu, Y; Yang, M; Wong, JI; Liu, Z; Fung, S | 2009 | 432 |
| Resistive switching in aluminum/anodized aluminum film structure without forming process | Zhu, W; Chen, TP; Liu, Z; Yang, M; Liu, Y; Fung, S | 2009 | 173 |
| Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film | Cen, ZH; Chen, TP; Ding, L; Liu, Y; Liu, Z; Yang, M; Wong, JI; Goh, WP; Zhu, FR; Fung, S | 2009 | 372 |
| Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination | Yang, M; Chen, TP; Ding, L; Liu, Y; Zhu, FR; Fung, S | 2009 | 265 |
| Charging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al 2O 3/p-Si Diodes | Zhu, W; Chen, TP; Liu, Y; Yang, M; Zhang, S; Zhang, WL; Fung, S | 2009 | 238 |
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