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TypeTitleAuthor(s)YearViews
A quantitative modeling of the contributions of localized surface plasmon resonance and interband transitions to absorbance of gold nanoparticlesZhu, S; Chen, TP; Liu, YC; Liu, Y; Fung, S2012157
 
Flexible write-once-read-many-times memory device based on a nickel oxide thin filmYu, Q; Liu, Y; Chen, TP; Liu, Z; Yu, YF; Lei, HW; Zhu, J; Fung, S2012122
 
Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide filmHu, SG; Liu, Y; Chen, TP; Liu, Z; Yang, M; Yu, Q; Fung, S2012108
 
Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated TemperaturesZhu, W; Chen, TP; Yang, M; Liu, Y; Fung, SHY201291
 
Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structureZhu, W; Chen, TP; Liu, Y; Fung, SHY2012144
 
Temperature dependence of resistive switching in aluminum/anodized aluminum film structureZhu, W; Chen, TP; Yang, M; Liu, Y; Fung, S2011739
 
Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin filmLiu, Y; Chen, TP; Liu, Z; Yu, YF; Yu, Q; Li, P; Fung, S2011171
 
Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin filmsLiu, Y; Chen, TP; Ding, L; Yang, M; Liu, Z; Wong, JI; Fung, S2011271
 
Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin filmsCen, ZH; Chen, TP; Ding, L; Liu, Z; Wong, JI; Yang, M; Goh, WP; Fung, S2011177
 
Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al 2O 3/p-Si diodeZhu, W; Chen, TP; Liu, Y; Yang, M; Fung, S2011837
 
Competition of resistive-switching mechanisms in nickel-rich nickel oxide thin filmsYu, Q; Liu, Y; Chen, TP; Liu, Z; Yu, YF; Fung, S2011128
 
A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystalsLiu, Y; Chen, TP; Ding, L; Li, YB; Zhang, S; Fung, S2010188
 
Charge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devicesYang, M; Chen, TP; Wong, JI; Liu, Y; Tseng, AA; Fung, S2010159
 
CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystalsLiu, Y; Chen, TP; Yang, M; Cen, ZH; Chen, XB; Li, YB; Fung, S2009892
 
Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si IonsCen, ZH; Chen, TP; Ding, L; Ye, JD; Liu, Y; Yang, M; Wong, JI; Liu, Z; Fung, S2009429
 
Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ionsCen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S2009422
 
Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin filmCen, ZH; Chen, TP; Ding, L; Liu, Y; Liu, Z; Yang, M; Wong, JI; Goh, WP; Zhu, FR; Fung, S2009506
 
Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illuminationYang, M; Chen, TP; Ding, L; Liu, Y; Zhu, FR; Fung, S2009275
 
Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealingCen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S2009538
 
Charging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al 2O 3/p-Si DiodesZhu, W; Chen, TP; Liu, Y; Yang, M; Zhang, S; Zhang, WL; Fung, S2009345
 
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