Results 1 to 9 of 9
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TypeTitleAuthor(s)YearViews
Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin filmsCen, ZH; Chen, TP; Ding, L; Liu, Z; Wong, JI; Yang, M; Goh, WP; Fung, S2011180
 
CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystalsLiu, Y; Chen, TP; Yang, M; Cen, ZH; Chen, XB; Li, YB; Fung, S2009892
 
Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si IonsCen, ZH; Chen, TP; Ding, L; Ye, JD; Liu, Y; Yang, M; Wong, JI; Liu, Z; Fung, S2009429
 
Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ionsCen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S2009422
 
Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin filmCen, ZH; Chen, TP; Ding, L; Liu, Y; Liu, Z; Yang, M; Wong, JI; Goh, WP; Zhu, FR; Fung, S2009507
 
Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealingCen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S2009539
 
Annealing effect on the optical properties of implanted silicon in a silicon nitride matrixCen, ZH; Chen, TP; Ding, L; Liu, Y; Yang, M; Wong, JI; Liu, Z; Liu, YC; Fung, S2008484
 
Charging effect of Al 2O 3 thin films containing Al nanocrystalsLiu, Y; Chen, TP; Zhu, W; Yang, M; Cen, ZH; Wong, JI; Li, YB; Zhang, S; Chen, XB; Fung, S200865
 
Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystalsLiu, Z; Chen, TP; Liu, Y; Ding, L; Yang, M; Wong, JI; Cen, ZH; Li, YB; Zhang, S; Fung, S2008261
 
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