| Title | Author(s) | Year | View Count |
 | Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films | Cen, ZH; Chen, TP; Ding, L; Liu, Z; Wong, JI; Yang, M; Goh, WP; Fung, S | 2011 | 174 |
| CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals | Liu, Y; Chen, TP; Yang, M; Cen, ZH; Chen, XB; Li, YB; Fung, S | 2009 | 886 |
| Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions | Cen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S | 2009 | 438 |
| Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions | Cen, ZH; Chen, TP; Ding, L; Ye, JD; Liu, Y; Yang, M; Wong, JI; Liu, Z; Fung, S | 2009 | 430 |
 | Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film | Cen, ZH; Chen, TP; Ding, L; Liu, Y; Liu, Z; Yang, M; Wong, JI; Goh, WP; Zhu, FR; Fung, S | 2009 | 369 |
| Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing | Cen, ZH; Chen, TP; Ding, L; Liu, Y; Wong, JI; Yang, M; Liu, Z; Goh, WP; Zhu, FR; Fung, S | 2009 | 508 |
| Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix | Cen, ZH; Chen, TP; Ding, L; Liu, Y; Yang, M; Wong, JI; Liu, Z; Liu, YC; Fung, S | 2008 | 489 |
| Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals | Liu, Z; Chen, TP; Liu, Y; Ding, L; Yang, M; Wong, JI; Cen, ZH; Li, YB; Zhang, S; Fung, S | 2008 | 234 |
 | Charging effect of Al2O3 thin films containing Al nanocrystals | Liu, Y; Chen, TP; Zhu, W; Yang, M; Cen, ZH; Wong, JI; Li, YB; Zhang, S; Chen, XB; Fung, SHY | 2008 | 485 |
| Charging effect of Al 2O 3 thin films containing Al nanocrystals | Liu, Y; Chen, TP; Zhu, W; Yang, M; Cen, ZH; Wong, JI; Li, YB; Zhang, S; Chen, XB; Fung, S | 2008 | 38 |
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