| Title | Author(s) | Year | View Count |
 | On the T2 trap in zinc oxide thin films | Schmidt, M; Ellguth, M; Karsthof, R; v Wenckstern, H; Pickenhain, R; Grundmann, M; Brauer, G; Ling, FCC | 2012 | 83 |
 | Erratum: Electrical properties of ZnO nanorods studied by conductive atomic force microscopy (Journal of Applied Physics (2011) 110 (052005)) | Beinik, I; Kratzer, M; Wachauer, A; Wang, L; Lechner, RT; Teichert, C; Motz, C; Anwand, W; Brauer, G; Chen, XY; Hsu, YF; Djurišić, AB | 2012 | 45 |
 | Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory | Dai, XM; Xu, SJ; Ling, CC; Brauer, G; Anwand, W; Skorupa, W | 2012 | 69 |
 | Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal | Ye, ZR; Lu, XH; Ding, GW; Fung, S; Ling, CC; Brauer, G; Anwand, W | 2011 | 413 |
 | Activities towards p-type doping of ZnO | Brauer, G; Kuriplach, J; Ling, CC; Djurišić, AB | 2011 | 203 |
 | Characterization of microstructural defects in melt grown ZnO single crystals | Anwand, W; Brauer, G; Grynszpan, RI; Cowan, TE; Schulz, D; Klimm, D; Iek, J; Kuriplach, J; Prochzka, I; Ling, CC; Djurii, AB; Klemm, V; Schreiber, G; Rafaja, D | 2011 | 685 |
 | Electrical properties of ZnO nanorods studied by conductive atomic force microscopy | Beinik, I; Kratzer, M; Wachauer, A; Wang, L; Lechner, RT; Teichert, C; Motz, C; Anwand, W; Brauer, G; Chen, XY; Hsu, XY; Djurišić, AB | 2011 | 94 |
 | Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals | Zheng, CC; Xu, SJ; Ning, JQ; Chen, YN; Lu, XH; Ling, CC; Che, CM; Gao, GY; Hao, JH; Brauer, G; Anwand, W | 2011 | 141 |
 | Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film | Fan, J; Zhu, C; Yang, B; Fung, S; Beling, CD; Brauer, G; Anwand, W; Grambole, D; Skorupa, W; Wong, KS; Zhong, YC; Xie, Z; Ling, CC | 2011 | 195 |
 | Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering | Fan, JC; W Ding, G; Fung, S; Xie, Z; Zhong, YC; Wong, KS; Brauer, G; Anwand, W; Grambole, D; Ling, CC | 2010 | 686 |
 | Scanning probe microscopy-based characterization of ZnO nanorods | Teichert, C; Hou, Y; Beinik, I; Chen, X; Hsu, YF; Djurišić, AB; Anwand, W; Brauer, G | 2010 | 50 |
 | Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystal | Ding, G; Ling, CC; Anwand, W; Brauer, G; Skorupa, W | 2010 | 237 |
 | Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy | Brauer, G; Anwand, W; Grambole, D; Grenzer, J; Skorupa, W; Čížek, J; Kuriplach, J; Procházka, I; Ling, CC; So, CK; Schulz, D; Klimm, D | 2009 | 650 |
 | Defects in zinc-implanted ZnO thin films | Schmidt, M; Ellguth, M; Czekalla, C; V Wenckstern, H; Pickenhain, R; Grundmann, M; Brauer, G; Skorupa, W; Helm, M; Gu, Q; Ling, CC | 2009 | 600 |
 | Deep-level defects study of arsenic-implanted ZnO single crystal | Zhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W | 2009 | 583 |
 | Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering | Fan, JC; Zhu, CY; Fung, S; Zhong, YC; Wong, KS; Xie, Z; Brauer, G; Anwand, W; Skorupa, W; To, CK; Yang, B; Beling, CD; Ling, CC | 2009 | 762 |
 | Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methods | Brauer, G; Anwand, W; Grambole, D; Egger, W; Sperr, P; Beinik, I; Wang, L; Teichert, C; Kuriplach, J; Lang, J; Zviagin, S; Cizmar, E; Ling, CC; Hsu, YF; Xi, YY; Chen, X; Djurišić, AB; Skorupa, W | 2009 | 612 |
 | Exceptionally long exciton photoluminescence lifetime in ZnO tetrapods | Zhong, Y; Djurišić, AB; Hsu, YF; Wong, KS; Brauer, G; Ling, CC; Chan, WK | 2008 | 531 |
 | Influence of electron irradiation on hydrothermally grown zinc oxide single crystals | Lu, LW; So, CK; Zhu, CY; Gu, QL; Li, CJ; Fung, S; Brauer, G; Anwand, W; Skorupa, W; Ling, CC | 2008 | 566 |
 | Vacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approach | Zhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W | 2008 | 597 |
|