| Title | Author(s) | Year | View Count |
 | The influence of the implantation dose and energy on the electroluminescence of Si +-implanted amorphous SiO 2 thin films | Ding, L; Chen, TP; Liu, Y; Yang, M; Wong, JI; Liu, KY; Zhu, FR; Fung, S | 2007 | 41 |
| Defect emissions in ZnO nanostructures | Djurišić, AB; Leung, YH; Tam, KH; Hsu, YF; Ding, L; Ge, WK; Zhong, YC; Wong, KS; Chan, WK; Tam, HL; Cheah, KW; Kwok, WM; Phillips, DL | 2007 | 287 |
| Depth profiling of charging effect of Si nanocrystals embedded in SiO2: A study of charge diffusion among Si nanocrystals | Liu, Y; Chen, TP; Ng, CY; Ding, L; Zhang, S; Fu, YQ; Fung, S | 2006 | 192 |
| Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires | Leung, CY; Djurišić, AB; Leung, YH; Ding, L; Yang, CL; Ge, WK | 2006 | 162 |
 | Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength | Djurišić, AB; Leung, YH; Tam, KH; Ding, L; Ge, WK; Chen, HY; Gwo, S | 2006 | 562 |
| Static dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film | Ng, CY; Chen, TP; Ding, L; Liu, Y; Tse, MS; Fung, S; Dong, ZL | 2006 | 652 |
| Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals | Liu, Y; Chen, TP; Lau, HW; Wong, JI; Ding, L; Zhang, S; Fung, S | 2006 | 755 |
| Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO 2 thin films | Ding, L; Chen, TP; Wong, JI; Yang, M; Liu, Y; Ng, CY; Liu, YC; Tung, CH; Trigg, AD; Fung, S | 2006 | 691 |
| Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam | Ng, CY; Chen, TP; Ding, L; Fung, S | 2006 | 906 |
| Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures | Liu, Y; Chen, TP; Ng, CY; Ding, L; Tse, MS; Fung, S; Tseng, AA | 2006 | 686 |
| Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance | Ng, CY; Chen, TP; Ding, L; Yang, M; Wong, JI; Zhao, P; Yang, XH; Liu, KY; Tse, MS; Trigg, AD; Fung, S | 2006 | 978 |
| Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams | Ng, CY; Chen, TP; Zhao, P; Ding, L; Liu, Y; Tseng, AA; Fung, S | 2006 | 844 |
| Defects in ZnO nanorods prepared by a hydrothermal method | Tam, KH; Cheung, CK; Leung, YH; Djurišić, AB; Ling, CC; Beling, CD; Fung, S; Kwok, WM; Chan, WK; Phillips, DL; Ding, L; Ge, WK | 2006 | 250 |
| Si ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides | Ng, CY; Chen, TP; Ding, L; Chen, Q; Liu, Y; Zhao, P; Tseng, AA; Fung, SHY | 2006 | 745 |
| Charging mechanism in a SiO 2 matrix embedded with Si nanocrystals | Liu, Y; Chen, TP; Ding, L; Zhang, S; Fu, YQ; Fung, S | 2006 | 520 |
| Defect emissions in ZnO nanostructures | Djurišić, AB; Leung, YH; Tarn, KH; Ding, L; Ge, WK; Chan, WK | 2005 | 183 |
| An approach to optical-property profiling of a planar-waveguide structure of Si nanocrystals embedded in SiO2 | Ding, L; Chen, TP; Liu, Y; Ng, CY; Fung, S | 2005 | 155 |
| Optical properties of silicon nanocrystals embedded in a SiO2 matrix | Ding, L; Chen, TP; Liu, Y; Ng, CY; Fung, S | 2005 | 128 |
| Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix | Ding, L; Chen, TP; Liu, Y; Ng, CY; Liu, YC; Fung, S | 2005 | 652 |
| Intelligent approaches for generating assembly drawings from 3-D computer models of mechanical products | Chen, KZ; Feng, XA; Ding, L | 2002 | 82 |
|
