Skip navigation
HKU Login
Guest Login
Home
Publications
Researchers
Staff
Research Postgraduates
Organizations
Grants
Datasets
Deposit Data
HKUL Research Data Management
Theses
Patents
Community Service
Browsing by Author Lo, HB
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
中
or enter first few letters:
Showing results 8 to 16 of 16
< previous
Title
Author(s)
Issue Date
Views
Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene
Journal:
Journal of the Electrochemical Society
Yang, BL
Lin, LM
Lo, HB
Lai, PT
Chan, CL
2005
186
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Hsu, CC
Lo, HB
Yang, YF
2000
163
Off-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectric
Journal:
Microelectronics Reliability
Lai, PT
Xu, JP
Lo, HB
Cheng, YC
1998
107
Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation
Journal:
Applied Physics Letters
Lai, PT
Xu, J
Lo, HB
Cheng, YC
1997
192
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge
Journal:
Microelectronics Reliability
Van, BP
Yang, YF
Hsu, CC
Lo, HB
Yang, ES
2001
143
A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
Journal:
Journal of Applied Physics
Lai, PT
Xu, JP
Lo, HB
Gheng, YC
1997
164
Suppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxide
Journal:
Solid-State Electronics
Lai, PT
Xu, JP
Huang, L
Lo, HB
Cheng, YC
1998
103
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Yang, YF
Hsu, CC
Ou, HJ
Lo, HB
1999
153
Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor
Journal:
Applied Physics Letters
Lo, HB
Yang, ES
Yang, YF
1999
155