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Showing results 21 to 40 of 59 < previous next >

Title	Author(s)	Issue Date	Views
FTY720 suppresses liver tumor metastasis by reducing the population of circulating endothelial progenitor cells Journal:PLoS ONE	Li, CX Shao, Y Ng, KTP Liu, XB Ling, CC Ma, YY Geng, W Fan, ST Lo, CM Man, K	2012	199
A garlic derivative, s-allylcysteine (sac), suppresses proliferation and metastasis of hepatocellular carcinoma Journal:PLoS ONE	Ng, KTP Guo, DY Cheng, Q Geng, W Ling, CC Li, CX Liu, XB Ma, YY Lo, CM Poon, RTP Fan, ST Man, K	2012	206
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings	Zou, X Xu, JP Lai, PT Li, CX Zhang, XF	2007	136
Glutathione Peroxidase 3 Delivered by hiPSC-MSCs Ameliorated Hepatic IR Injury via Inhibition of Hepatic Senescence Journal:Theranostics	Qi, X Ng, KT Lian, Q Li, CX Geng, W Ling, CC Yeung, WH Ma, YY Liu, XB Liu, H Liu, J Yang, XX Lo, CM Man, K	2018	96
Hydrogen gas sensing properties of Pt/Ta 2O 5 Schottky diodes based on Si and SiC substrates Proceeding/Conference:Procedia Engineering	Yu, J Chen, G Li, CX Shafiei, M Ou, J Du Plessis, J Kalantar-Zadeh, K Lai, PT Wlodarski, W	2010	178
Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates Proceeding/Conference:Sensors and Actuators A: Physical	Yu, J Chen, G Li, CX Shafiei, M Ou, JZ Du Plessis, J Kalantar-Zadeh, K Lai, PT Wlodarski, W	2011	185
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Ji, F Xu, JP Li, CX Lai, PT Chan, CL	2009	193
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric Journal:Applied Physics A: Materials Science and Processing	Xu, HX Xu, JP Li, CX Chan, CL Lai, PT	2010	206
Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer Journal:Applied Physics Letters	Zhang, XF Xu, JP Li, CX Lai, PT Chan, CL Guan, JG	2008	236
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient Journal:Applied Physics Letters	Xu, HX Xu, JP Li, CX Lai, PT	2010	173
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer Journal:IEEE Electron Device Letters	Xu, JP Zhang, XF Li, CX Lai, PT Chan, CL	2008	195
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient Journal:IEEE Electron Device Letters	Xu, JP Lai, PT Li, CX Zou, X Chan, CL	2006	522
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment Journal:Applied Physics A: Materials Science and Processing	Xu, JP Zou, X Li, CX Lai, PT Chan, CL	2009	213
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer Journal:Applied Physics Letters	Xu, JP Ji, F Li, CX Lai, PT Guan, JG Liu, YR	2007	121
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer Journal:Applied Physics Letters	Ji, F Xu, JP Liu, JG Li, CX Lai, PT	2011	189
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters	Ji, F Xu, JP Lai, PT Li, CX Liu, JG	2011	199
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO Journal:Applied Physics A: Materials Science and Processing	Lai, PT Xu, JP Li, CX Chan, CL	2005	146
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings	Li, CX Zou, X Xu, JP Lai, PT	2008	202
Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO Journal:Microelectronic Engineering	Li, CX Lai, PT Xu, JP	2007	242
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings	Ji, F Xu, JP Lai, PT Li, CX	2007	211

Showing results 21 to 40 of 59 < previous next >