Showing results 8 to 9 of 9
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Physical mechanisms for hot-electron degradation in GaN light-emitting diodes Journal:Journal of Applied Physics | 2010 | 171 | ||
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs Proceeding/Conference:I E E E Hong Kong Electron Devices Meeting Proceedings | 1996 | 177 |