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Browsing by Author Cheng, YC
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Showing results 42 to 61 of 107
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Title
Author(s)
Issue Date
Views
Hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under mixed AC-DC stressing
Journal:
Electron device letters
Ma, ZJ
Lai, PT
Cheng, YC
1992
120
A humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film
Journal:
Journal of Applied Physics
Li, GQ
Lai, PT
Huang, MQ
Zeng, SH
Li, B
Cheng, YC
2000
203
The impact of hypoxic treatment on the expression of phosphoglycerate kinase and the cytotoxicity of troxacitabine and gemcitabine
Journal:
Molecular Pharmacology
Lam, W
Leung, CH
Bussom, S
Cheng, YC
2007
66
Impact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injection
Journal:
Solid-State Electronics
Ma, ZJ
Liu, ZH
Lai, PT
Fleischer, S
Cheng, YC
1992
154
Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment
Journal:
Applied Physics Letters
Xu, JP
Lai, PT
Chan, CL
Cheng, YC
2000
167
Improved performance and reliability of N 2O-grown oxynitride on 6H-SiC
Journal:
IEEE Electron Device Letters
Xu, JP
Lai, PT
Chan, CL
Li, B
Cheng, YC
2000
187
Improvement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridation
Proceeding/Conference:
Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
Huang, MQ
Lai, PT
Ma, ZJ
Cheng, YC
Liu, BY
1992
39
Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation
Journal:
Applied Physics Letters
Huang, MQ
Lai, PT
Ma, ZJ
Wong, H
Cheng, YC
1992
99
Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment
Journal:
IEEE Electron Device Letters
Lai, PT
Xu, JP
Cheng, YC
1999
162
In vivo analysis and spatial profiling of phytochemicals in herbal tissue by matrix-assisted laser desorption/ionization mass spectrometry
Journal:
Analytical Chemistry
Ng, KM
Liang, Z
Lu, W
Tang, HW
Zhao, Z
Che, CM
Cheng, YC
2007
246
Induction of heme oxygenase-1 by the Chinese herbal formulation ISF-1 and its ingredients as a cytoprotective mechanism against oxidative stress
Proceeding/Conference:
Meeting of Consortium for Globalization of Chinese Medicine, CGCM 2007
Rong, J
Cheung, YH
Lau, ASY
Shen, J
Cheng, YC
Tam, PKH
2007
112
Induction of heme oxygenase-1 by traditional Chinese medicine formulation ISF-1 and its ingredients as a cytoprotective mechanism against oxidative stress
Journal:
International Journal of Molecular Medicine
Rong, J
Cheung, CYH
Lau, ASY
Shen, J
Tam, PKH
Cheng, YC
2008
164
Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's
Proceeding/Conference:
International Conference on VLSI and CAD Proceedings
Ma, ZJ
Lai, PT
Cheng, YC
Huang, MQ
1991
39
An integrated PVDF ultrasonic sensor with improved sensitivity using polyimide
Journal:
Sensors and Actuators, A: Physical
Zheng, XR
Lai, PT
Liu, BY
Li, B
Cheng, YC
1997
119
Integration of systemic biology, chemical profile fingerprint and functional imaging technology for understanding therapeutic principle of Chinese medicinal formula: a study on classical Post-Stroke Formula
Proceeding/Conference:
Meeting of the Consortium for Globalization of Chinese Medicine, CGCM 2007
Shen, J
Rong, J
Tong, Y
So, KF
Lau, ASY
Liu, KJ
Tam, PKH
Cheng, YC
2007
122
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Lai, PT
Xu, JP
Chan, CL
Cheng, YC
1999
122
Interface properties of N2O-annealed SiC metal oxide semiconductor devices
Journal:
Solid-State Electronics
Chakraborty, S
Lai, PT
Xu, JP
Chan, CL
Cheng, YC
2001
158
Interface properties of N2O-annealed SiO2/SiC system
Proceeding/Conference:
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Chakraborty, Supratic
Lai, PT
Chan, CL
Cheng, YC
2000
116
Interface properties of NO-annealed N2O-grown oxynitride
Journal:
IEEE Transactions on Electron Devices
Lai, PT
Xu, JP
Cheng, YC
1999
144
Invariant imbedding in semiconductor device simulation
Journal:
Solid State Electronics
Lai, PT
Cheng, YC
1985
106
