Browsing by Author Chan, CL

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 17 to 36 of 52 < previous   next >
TitleAuthor(s)Issue DateViews
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
91
 
2010
96
 
2008
124
 
2008
93
 
2006
428
 
2009
114
 
2003
77
 
2000
72
 
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:Applied Physics A: Materials Science and Processing
2005
69
 
2000
63
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
1999
46
 
2001
72
Interface properties of N2O-annealed SiO2/SiC system
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
42
 
2004
70
 
2005
74
 
2006
94
 
2004
98
 
2001
85
 
1996
84
 
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
77