Results 1 to 9 of 9
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Magnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gasDai, J; Lu, HZ; Yang, CL; Shen, SQ; Zhang, FC; Cui, X2010734
Determination of the sign of g factors for conduction electrons using time-resolved Kerr rotationYang, CL; Dai, J; Ge, WK; Cui, X2010663
Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrixYang, C; Cui, X; Shen, SQ; Xu, Z; Ge, W2009676
Light-induced incandescence of single-walled carbon nanotubesZeng, H; Yang, C; Dai, J; Cui, X2008628
Influence of the carrier gas on the luminescence of ZnO tetrapod nanowiresLeung, CY; Djurišić, AB; Leung, YH; Ding, L; Yang, CL; Ge, WK2006160
Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiationLing, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN2006178
Deep level defects in 6H silicon carbide induced by particles irradiationsLing, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM2005171
Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2Chen, XD; Yang, CL; Gong, M; Ge, WK; Fung, S; Beling, CD; Wang, JN; Lui, MK; Ling, CC2004719
Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxyLu, L; Yan, H; Yang, CL; Xie, M; Wang, Z; Wang, J; Ge, W2002165
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