| Title | Author(s) | Year | View Count |
 | Determination of the sign of g factors for conduction electrons using time-resolved Kerr rotation | Yang, CL; Dai, J; Ge, WK; Cui, X | 2010 | 659 |
| Magnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas | Dai, J; Lu, HZ; Yang, CL; Shen, SQ; Zhang, FC; Cui, X | 2010 | 707 |
| Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix | Yang, C; Cui, X; Shen, SQ; Xu, Z; Ge, W | 2009 | 677 |
 | Light-induced incandescence of single-walled carbon nanotubes | Zeng, H; Yang, C; Dai, J; Cui, X | 2008 | 594 |
| Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation | Ling, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN | 2006 | 193 |
| Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires | Leung, CY; Djurišić, AB; Leung, YH; Ding, L; Yang, CL; Ge, WK | 2006 | 158 |
 | Deep level defects in 6H silicon carbide induced by particles irradiations | Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM | 2005 | 189 |
| Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2 | Chen, XD; Yang, CL; Gong, M; Ge, WK; Fung, S; Beling, CD; Wang, JN; Lui, MK; Ling, CC | 2004 | 717 |
| Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy | Lu, L; Yan, H; Yang, CL; Xie, M; Wang, Z; Wang, J; Ge, W | 2002 | 164 |
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