Results 1 to 20 of 110
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TypeTitleAuthor(s)YearViews
Enhancement of 1/f noise degradation in n-MOSFETs under AC hot-carrier stress
Proceedings/Conference:
Proceedings of 15th International Conf. Noise in Physical Systems and 1/f Fluctuations
Lai, PT; Xu, J; Cheng, YC20997
 
An analysis on stress-induced degradation of 1/f noise in n-MOSFETs
Proceedings/Conference:
Proceedings of 15th International Conf. Noise in Physical Systems and 1/f Fluctuations
Lai, PT; Xu, J; Cheng, YC20998
 
Electrical Properties of Different NO-Annealed Oxynitrides
Proceedings/Conference:
Proceedings of Amorphous & Crystalline Insulating Thin Films II, Hong Kong
Xu, J; Lai, PT; Li, B.; Cheng, YC20989
 
Effects of Gate-Pulse Shape on the Accuracy of Charge-Pumping Measurement
Proceedings/Conference:
Tech.Digest of 1997 International Conference on VLSI and CAD, Seoul
Lai, PT; Xu, J; Poek, C.K.; Cheng, YC20979
 
Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer
Journal:
IEEE Trans. Electron Devices
Wang, L; Liu, L; Xu, J; Zhu, S.Y.; Huang, Y.; Lai, PT201413
 
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory
Journal:
Microelectronics Reliability
Chen, J; Xu, J; Liu, L; HUANG, X; Lai, PT201410
 
Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3
Journal:
Applied Physics A: materials science & processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Liu, L; Xu, JP; Chen, JX; Lai, PT20149
 
Improved interfacial and electrical properties of GaAs metal-oxdiesemiconductor capacitors with HfTiON as gate dialectric and TaON as Passivation interlayer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Zhu, S.Y.; Huang, Y.; Lai, PT; Wang, L; Xu, J201310
 
Improved Performances Of Metal-Oxide-Nitride-Oxide-Silicon Memory With Hftion as Charge Trapping Layer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Chen, J; Xu, J; Liu, L; Lai, PT20136
 
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:
Thin Solid Films
Liu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201243
 
Comparison between TaON/SiO2 and HfON/SiO2 as Dual Tunnel Layer in Charge-Trapping Flash Memory Applications
Proceedings/Conference:
IEEE International Conference on EDSSC
Chen, J; Xu, J; Liu, L; Xu, HX; Lai, PT201248
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceedings/Conference:
IEEE International Conference on EDSSC
Liu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201249
 
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Liu, L; Xu, J; Chen, JX; Ji, F; Lai, PT201246
 
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Liu, L; Xu, J; Ji, F; Chen, JX; Lai, PT201243
 
Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Huang, XD; Liu, L; Xu, JP; Lai, PT2011138
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:
IEEE Transactions on Device and Materials Reliability
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Liu, L; Xu, JP; Ji, F; Huang, XD; Lai, PT2011143
 
Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Huang, XD; Lai, PT; Liu, L; Xu, JP2011136
 
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Huang, XD; Liu, L; Xu, JP; Lai, PT2011134
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Xu, HX; Xu, JP; Li, CX; Lai, PT2010116
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, HX; Xu, JP; Li, CX; Lai, PT2010118
 
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