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TypeTitleAuthor(s)YearViews
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memoryLiu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201220
 
Comparison between TaON/SiO2 and HfON/SiO2 as Dual Tunnel Layer in Charge-Trapping Flash Memory ApplicationsChen, J; Xu, J; Liu, L; Xu, HX; Lai, PT201224
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage LayerLiu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201224
 
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory ApplicationsLiu, L; Xu, J; Ji, F; Chen, JX; Lai, PT201217
 
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band StructureLiu, L; Xu, J; Chen, JX; Ji, F; Lai, PT201219
 
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 filmsHuang, XD; Liu, L; Xu, JP; Lai, PT201195
 
Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applicationsHuang, XD; Liu, L; Xu, JP; Lai, PT201188
 
A novel MONOS memory with high-κ HfLaON as charge-storage layerLiu, L; Xu, JP; Ji, F; Huang, XD; Lai, PT201199
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambientXu, HX; Xu, JP; Li, CX; Lai, PT201074
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambientXu, HX; Xu, JP; Li, CX; Lai, PT201078
 
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrodeXu, JP; Xiao, X; Lai, PT201088
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectricLi, CX; Leung, CH; Lai, PT; Xu, JP201098
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectricXu, HX; Xu, JP; Li, CX; Chan, CL; Lai, PT2010173
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayerXu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT2010241
 
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectricLi, C; Wang, C; Leung, CH; Lai, PT; Xu, JP2009173
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thicknessXu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL200991
 
A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectricLiu, L; Xu, JP; Chen, LL; Lai, PT2009115
 
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitorXu, HX; Xu, JP; Li, CX; Liu, L; Lai, PT; Chan, CL2009333
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectricJi, F; Xu, JP; Chen, JJ; Xu, HX; Li, CX; Lai, PT2009301
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectricJi, F; Xu, JP; Li, CX; Lai, PT; Chan, CL2009301
 
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