Results 1 to 20 of 107
Page 1 of 6  Next >
TypeTitleAuthor(s)YearViews
Effects of Gate-Pulse Shape on the Accuracy of Charge-Pumping Measurement
Proceedings/Conference:
Tech.Digest of 1997 International Conference on VLSI and CAD, Seoul
Lai, PT; Xu, J; Poek, C.K.; Cheng, YC209711
 
Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer
Journal:
IEEE Trans. Electron Devices
Wang, L; Liu, L; Xu, J; Zhu, S.Y.; Huang, Y.; Lai, PT201416
 
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Chen, JX; Xu, JP; Liu, L; Huang, XD; Lai, PT201421
 
Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3
Journal:
Applied Physics A: materials science & processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Liu, L; Xu, JP; Chen, JX; Lai, PT201419
 
Improved interfacial and electrical properties of GaAs metal-oxdiesemiconductor capacitors with HfTiON as gate dialectric and TaON as Passivation interlayer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Zhu, S.Y.; Huang, Y.; Lai, PT; Wang, L; Xu, J201317
 
Improved Performances Of Metal-Oxide-Nitride-Oxide-Silicon Memory With Hftion as Charge Trapping Layer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Chen, J; Xu, J; Liu, L; Lai, PT201311
 
Comparison between TaON/SiO2 and HfON/SiO2 as Dual Tunnel Layer in Charge-Trapping Flash Memory Applications
Proceedings/Conference:
IEEE International Conference on EDSSC
Chen, J; Xu, J; Liu, L; Xu, HX; Lai, PT201252
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceedings/Conference:
IEEE International Conference on EDSSC
Liu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201252
 
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Liu, L; Xu, J; Chen, JX; Ji, F; Lai, PT201247
 
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Liu, L; Xu, J; Ji, F; Chen, JX; Lai, PT201246
 
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:
Thin Solid Films
Liu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201245
 
Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Huang, XD; Liu, L; Xu, JP; Lai, PT2011150
 
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Huang, XD; Liu, L; Xu, JP; Lai, PT2011145
 
Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Huang, XD; Lai, PT; Liu, L; Xu, JP2011147
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:
IEEE Transactions on Device and Materials Reliability
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Liu, L; Xu, JP; Ji, F; Huang, XD; Lai, PT2011151
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT2010334
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Xu, HX; Xu, JP; Li, CX; Lai, PT2010124
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, HX; Xu, JP; Li, CX; Lai, PT2010125
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Journal:
Solid-State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Li, CX; Leung, CH; Lai, PT; Xu, JP2010175
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, HX; Xu, JP; Li, CX; Chan, CL; Lai, PT2010242
 
Page 1 of 6  Next >
Export Records
Step 1: Select content and export format
  • Citation only
Step 2: Select export method
  • Download