| Title | Author(s) | Year | View Count |
 | Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric | Li, CX; Leung, CH; Lai, PT; Xu, JP | 2010 | 61 |
| A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode | Xu, JP; Xiao, X; Lai, PT | 2010 | 74 |
 | Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric | Xu, HX; Xu, JP; Li, CX; Chan, CL; Lai, PT | 2010 | 140 |
| Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer | Xu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT | 2010 | 228 |
| Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient | Xu, HX; Xu, JP; Li, CX; Lai, PT | 2010 | 67 |
| Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient | Xu, HX; Xu, JP; Li, CX; Lai, PT | 2010 | 68 |
| A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectric | Liu, L; Xu, JP; Chen, LL; Lai, PT | 2009 | 122 |
| A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric | Ji, F; Xu, JP; Chen, JJ; Xu, HX; Li, CX; Lai, PT | 2009 | 196 |
| Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2 | Deng, LF; Choi, HW; Lai, PT; Liu, YR; Xu, JP | 2009 | 736 |
| Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor | Xu, HX; Xu, JP; Li, CX; Liu, L; Lai, PT; Chan, CL | 2009 | 203 |
| Fabrication and electrical characterization of MONOS memory with novel high-κ gate stack | Liu, L; Xu, JP; Chan, CL; Lai, PT | 2009 | 240 |
| Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric | Li, CX; Xu, HX; Xu, JP; Lai, PT | 2009 | 243 |
| Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric | Ji, F; Xu, JP; Li, CX; Lai, PT; Chan, CL | 2009 | 181 |
 | A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric | Li, C; Wang, C; Leung, CH; Lai, PT; Xu, JP | 2009 | 172 |
| A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric | Li, CX; Wang, CD; Leung, CH; Lai, PT; Xu, JP | 2009 | 72 |
| Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment | Xu, JP; Zou, X; Li, CX; Lai, PT; Chan, CL | 2009 | 72 |
| Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness | Xu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL | 2009 | 80 |
| Pentacene thin-film transistors with HfO 2 gate dielectric annealed in NH 3 or N 2O | Deng, LF; Tang, WM; Leung, CH; Lai, PT; Xu, JP; Che, CM | 2008 | 301 |
| Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer | Li, CX; Zhang, XF; Xu, JP; Lai, PT | 2008 | 178 |
| Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric | Xu, JP; Ji, F; Lai, PT; Guan, JG | 2008 | 178 |
