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TypeTitleAuthor(s)YearViews
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:
Thin Solid Films
Liu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201237
 
Comparison between TaON/SiO2 and HfON/SiO2 as Dual Tunnel Layer in Charge-Trapping Flash Memory Applications
Proceedings/Conference:
IEEE International Conference on EDSSC
Chen, J; Xu, J; Liu, L; Xu, HX; Lai, PT201238
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceedings/Conference:
IEEE International Conference on EDSSC
Liu, L; Xu, J; Chen, JX; Ji, F; HUANG, X; Lai, PT201243
 
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Liu, L; Xu, J; Ji, F; Chen, JX; Lai, PT201234
 
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Liu, L; Xu, J; Chen, JX; Ji, F; Lai, PT201238
 
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Huang, XD; Liu, L; Xu, JP; Lai, PT2011117
 
Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Huang, XD; Liu, L; Xu, JP; Lai, PT2011110
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:
IEEE Transactions on Device and Materials Reliability
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Liu, L; Xu, JP; Ji, F; Huang, XD; Lai, PT2011122
 
Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Huang, XD; Lai, PT; Liu, L; Xu, JP2011116
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Xu, HX; Xu, JP; Li, CX; Lai, PT201093
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, HX; Xu, JP; Li, CX; Lai, PT201097
 
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Xu, JP; Xiao, X; Lai, PT2010111
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Journal:
Solid-State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Li, CX; Leung, CH; Lai, PT; Xu, JP2010138
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, HX; Xu, JP; Li, CX; Chan, CL; Lai, PT2010221
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT2010293
 
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectricLi, C; Wang, C; Leung, CH; Lai, PT; Xu, JP2009187
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Xu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL2009111
 
A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectric
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Liu, L; Xu, JP; Chen, LL; Lai, PT2009135
 
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor
Proceedings/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Publisher:
IEEE.
Xu, HX; Xu, JP; Li, CX; Liu, L; Lai, PT; Chan, CL2009345
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceedings/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Publisher:
IEEE.
Ji, F; Xu, JP; Chen, JJ; Xu, HX; Li, CX; Lai, PT2009340
 
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